IDT70V24 Search Results

Contextual Info: PRELIMINARY IDT70V24S/L HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V

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Abstract: IDT7024PF
Contextual Info: H l DT HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM F e a tu re s * * * * * True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access Commercial; 25/35/55ns max. Low-power operation IDT70V24S Active: 230mW (typ.)

IDT7024PF

Abstract: IDT70V24 IDT70V24L IDT70V24S G84-3 LS5901 70V24
Contextual Info: HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V24S Active: 230mW (typ.)

Contextual Info: INTEGRATE» DEVICE bflE T> • L4Û25771 0014204 207 ■ IDT PRELIMINARY IDT70V24S/L HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology« Inc. FEATURES: • M /S = H fo r B U S Y o u tp u t fla g o n M a s te r • T ru e D u a l-P o rte d m e m o ry c e lls w h ic h a llo w s im u lta ­

Contextual Info: IDT70V24S35PF 1/4 IL08 C-MOS 4 K x 16 DUAL-PORT STATIC RAM NC NC NC NC NC NC NC NC NC NC VDD (+3.3 V) GND VDD (+3.3 V) GND GND GND GND NC NC NC NC VDD (+3.3 V) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 76 77 78 79 80 81 82 83 84 85

5R82

Contextual Info: SvNjp fdt HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM IDT70V24S/L Integrated Device Technology, Inc. FEATURES: • • • • • more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave Busy and Interrupt Flag Devices are capable of withstanding greater than 2001V

Contextual Info: HIGH-SPEED 3.3V 4 K x 16 DUAL-PORT STATIC RAM IDT70V24S/L In te grated D e v ic e T e c h n o lo g y , Inc. more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave Busy and Interrupt Flag Devices are capable of withstanding greater than 2001V

IDT70V24

Abstract: IDT70V24L IDT70V24S 70V24
Contextual Info: HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM IDT70V24S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation

IDT70V24PF

Abstract: IDT70V24J IDT70V24 IDT70V24L IDT70V24S 70V24
Contextual Info: HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V24S Active: 230mW (typ.)

l4766

Contextual Info: HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V24S/L Integrated D evice Technology, Inc. FEATURES: • • • • • • T rue D u a l-P o rte d m e m o ry c e lls w hich a llo w sim u lta ­ ne ous reads o f th e sa m e m e m o ry location

IDT70V24

Abstract: IDT70V24L IDT70V24S 70V24
Contextual Info: PRELIMINARY IDT70V24S/L HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max.

70V24

Contextual Info: HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V24S Active: 230mW (typ.)

70V24

Contextual Info: HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM IDT70V24S/L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/25/35/55ns (max.)

IDT70V24

Abstract: IDT70V24L IDT70V24S 3.3m 70V24
Contextual Info: PRELIMINARY IDT70V24S/L HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max.

Contextual Info: HIGH-SPEED 3.3V 4 K x 16 DUAL-PORT STATIC RAM IDT70V24S/L Integrated Device Technology, Inc. • FEATURES: • True Dual-Ported memory cells which allow sim ulta­ neous access of the same mem ory location • High-speed access — Com m ercial: 25/35/55ns max.

IDT70V24

Abstract: IDT70V24L IDT70V24S 70V24
Contextual Info: IDT70V24S/L HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. more than one device • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Busy and Interrupt Flag • Devices are capable of withstanding greater than 2001V

Contextual Info: HIGH-SPEED 3.3V 4 K x 16 DUAL-PORT STATIC RAM F e a tu re s True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access ♦ - ♦ Com mercial: 25/35/55ns max. Low-power operation - IDT70V24S A ctive: 23 0 m W (typ.)

9l reset

Abstract: o14l 70V25 CY7C036V IDT70V24 CY7024
Contextual Info: fax id: 5213 51 PRELIMINARY CY7C024V/025V/026V CY7C0241V/0251V/036V 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • Automatic power-down • Expandable data bus to 32/36 bits or more using Master/Slave chip select when using more than one device • On-chip arbitration logic

CY7024

Contextual Info: fax id: 5213 PRELIMINARY CY7C024V/025V/026V CY7C0241V/0251V/036V 3.3V 4K /8K /16K x 16/18 Dual-Port Static RAM Autom atic power-down Expandable data bus to 32/36 bits or more using Mas­ ter/Slave chip select when using more than one device On-chip arbitration logic

70V25

Abstract: CY7C0241 CY7C036AV IDT70V24 CY7C026AV-25AI CY7C025AV15
Contextual Info: W jÊ CY7C024AV/025AV/026AV CY7C0241 AV/0251 AV/036AV PRELIMINARY 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • True dual-ported m em ory cells which allow sim ulta­ neous access of the same m em ory location • 4/8/16K x 16 organization CY7C024AV/025AV/026AV

70V25

Abstract: CY7C036AV IDT70V24
Contextual Info: 25/0251 CY7C024AV/025AV/026AV CY7C0241AV/0251AV/036AV 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM • Automatic power-down • Expandable data bus to 32/36 bits or more using Master/ Slave chip select when using more than one device • On-chip arbitration logic

70V25

Abstract: 5624 DSC-5624 70V24 70V34
Contextual Info: HIGH-SPEED 3.3V 8/4K x 18 DUAL-PORT 8/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access IDT70V35/34 – Commercial: 15/20/25ns max. – Industrial: 20ns

70V25

Abstract: 70V34
Contextual Info: HIGH-SPEED 3.3V 8/4K x 18 DUAL-PORT 8/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access IDT70V35/34 – Commercial: 15/20/25ns max. – Industrial: 20ns

Contextual Info: fax id: 5213 C Y 7 C 0 2 4 V /0 2 5 V /0 2 6 V CYPRESS PRELIMINARY C Y 7 C 0 2 4 1 V /0 2 5 1 V /0 3 6 V 3.3V 4K/8K/16KX 16/18 Dual-Port Static RAM Featu res • Automatic power-down • Expandable data bus to 32/36 bits or more using Mas­ ter/Slave chip select when using m ore than one device