M992 Search Results

m9926

Abstract: stm9926
Contextual Info: S T M9926 S amHop Microelectronics C orp. J an. 10 2008 ver1.0 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

TB-285

Abstract: FV1206-1 R04350B M99247 FV-1206-1
Contextual Info: REV ECN No. OR A A B SUGGESTED FOR F V 1 2 0 6 - 1 REVISIONS DESCRIPTION M92199 M99247 R60782 M102713 MO UNTING CASE DATE 05/24/04 0 6 /0 5 0 6 /0 5 01/12/06 NEW RELEASE ADD GROUND PTH ADD GROUND PTH ADDED ".WITH SMOBC” STYLE. DR AUTH AV RZ RZ GF ABD RZ

m9926

Abstract: STM9926 TM9926
Contextual Info: S T M9926 S amHop Microelectronics C orp. Dec. 08 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max R ugged and reliable.

Contextual Info: 10-0B066PA006SA-M992F09 target datasheet Inverter switch maximum ratings Inverter diode maximum ratings Copyright Vincotech 1 04 Dec. 2014 / Revision 1 10-0B066PA006SA-M992F09 target datasheet Inverter switch characteristic values Inverter dynamic values Copyright Vincotech

Contextual Info: Ultra Wide Bandwidth Amplifier 50Ω, ZX60-14012L 300 KHz to 14 GHz Features • • • • • • • Wide Bandwidth, 300 KHz to 14 GHz Reverse voltage connection protected Over-voltage transient protected Excellent flatness over frequency range, ±1dB Typ.

PM5357-BI

Abstract: cpci backplane schematic plx vhdl code PCI9050-1 F 1uH smt unimax of thumbwheel switch LT1066 CC621660B PM5357-BI-P
Contextual Info: PMC-Sierra, Inc. PRELIMINARY PM5357 S/UNI-622-POS REFERENCE DESIGN PMC-1981070 ISSUE 2 S/UNI-622-POS REFERENCE DESIGN PM5357 S/UNI-622-POS SATURN USER NETWORK INTERFACE 622-POS REFERENCE DESIGN PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 2: FEBRUARY 2000

MT4C4001

Contextual Info: MT20D240 2 MEG X 40 DRAM M ODULE p iC R O fS J 2 MEG X 40 DRAM DRAM MODULE NEW I FAST PAGE MODE MT20D240 LOW POWER, EXTENDED REFRESH (MT20D240 L) FEATURES • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance CM OS silicon-gate process.

5 PEN PC TECHNOLOGY advance

Contextual Info: ADVANCE M IC R O N 16 MEG X MT9D169 9 DRAM M OD ULE 16 MEG x 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 30-pin single-in-line package • High-performance, CM OS silicon-gate process • Single 5V ±10% power supply

T4C400

Abstract: mt4c4004jdj
Contextual Info: M T4C4004J 1 MEG X 4 DRAM l^ldRON DRAM 1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES _ • Four independent C A S controls, allo w ing in d ivid u al m anipulation to each of the four data In p u t/O u tp ut ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words w hen using 1 M eg x 4 D R A M s for m emory

Contextual Info: | V | IC = n O N MEG DRAM MODULE M T 8D 13 2 32, 2 M E G x 16 D R A M M O D U L E X 1 MEG X 32, 2 MEG 16 X FAST PAGE MODE MT8D132 LOW POWER, EXTENDED REFRESH (MT8D132 L) FEA TU RES PIN A SSIG N M EN T (Top View) • Industry standard pinout in a 72-pin single-in-line

Contextual Info: ADVANCE M IC R O N 16 MEG X MT8D168 8 DRAM M OD ULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 3 0 -pin SIMM Leaded 30-pin SIP 30-Pin SIMM (T-6)

ITE 8512

Abstract: ge 8513 M992 MT4CB512
Contextual Info: ADVANCE M T4C 85 12/3 L 512K X 8 DRAM |v iic = R a i\j 512K x 8 DRAM LOW POWER, EXTENDED REFRESH PIN ASSIGNMENT Top View • Ind ustry stand ard x8 p in o u ts, tim in g , fu n ctio n s and packages • A d d ress en try: 1Ü row ad d resses, n in e colu m n

tms 9937

Abstract: TSMC fuse PALC22V10b M99242 CY7C1353-AC MR841 Hyundai 9944 PALC22V10B-15PC
Contextual Info: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 4, 1999 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Director CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 4, 1999

M9926

Abstract: FV1206 LFCN-2250 LFCN-2250D LFCN-800 295050
Contextual Info: Ceramic ! NEW Low Pass Filter LFCN-2250 DC to 2250 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* • • • • • 10W max. at 25°C DC Current Input to Output 0.5A max. at 25°C

MT4C1664

Contextual Info: M T 4 C 1 664/5 64K X 16 D R A M |V|IC=RO N 6 4 K X 16 D R A M DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • In d u stry standard x l6 pinouts, tim ing, functions and packages • H igh-perform ance, C M O S silicon-gate process • Single +5V±10% p o w er supply

MT4C1004

Contextual Info: ADVANCE I^ IIC Z R O N 4 MEG 4 MEG X MT3D49 9 DRAM MODULE 9 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 12mW standby; 775mW active, typical

WTS 1.7 IC

Abstract: jeida dram card 5v jeida dram 88 pin
Contextual Info: M I£ ~ n r ~ lfV I I M T24D88C51236 512K x 36, 1 MEG x 18 IC DRAM CARD IC DRAM CARD 2 MEGABYTES 512K x 36, 1 MEG x 18 FEATURES PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC DRAM card • Polarized receptacle connector

l992

Abstract: S992 T4C1004JDJ-6
Contextual Info: l^ iiC R MT4C1004J 4 MEG X 1 DRAM o r s j DRAM 4 MEG X 1 DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225m W active, typical

MT42C8256

Abstract: l992 sc 8256 mt42c MT42C256
Contextual Info: ADVANCE MT42C8256 2 56 K X 8 V R A M I^ IIC R O N VRAM 256K x 8 DRAM WITH 512 x 8 SAM FEATURES • • • • 40-Pin SOJ Q-6 Vcc SC SDQ1 S 002 SD03 SD04 ( ( ( ( t ( T R iO l D01 002 003 004 r [ [ [ [ A5 [ 18 A4 [ 19 Vcc [ 20 - 7 - 8 • Packages Plastic SOJ (400 mil)

Contextual Info: ADVANCE MT4C16M1D1 16 MEG X 1 DRAM M IC R O N DRAM 16 MEG x1 DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single power supply: +5V ±10% • Low power, 3m W standby; 330mW active, typical

131-6 bj 028

Abstract: BJ 131-6 10 PIN 2 ROW berg connector 131-6 bj 008 B-26 LR46923 MIL-P-55110 QQ-W-343 BERG Electronics 731aa
Contextual Info: Shrouded Headers 2.54 X 2.54 mm 0.100 x 0.100 in. Description Right-Angle 2-Row Header, Series 65268 2.54 i 0.08 mm {0100 1 0.003 In.) TOL NON-CUMULATIVE t ¿ h y i— (b o o ' V V 1,00* 0,76,nmO 1.00 * 0.76 mm . . (0.040 1 0.003 in ) 2.54 i 0.08 mm (0.100 t 0.003 In.)

CYM1464

Abstract: CY7C1353-AC MR840
Contextual Info: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 3, 1999 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Director CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 3, 1999

16F683

Abstract: SR 6863 ELECTRONIC BALLAST 236 cp5 94v-0 5252 F solar CP5 94V0 Amphenol ecomate Assembly instructions Pressure Sensor Spx 3058 rt0618 tag 8807
Contextual Info: ND3% BASE1 XXXX5317-0910-1-P 910 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 17:11 TS:TS date TS time CONNECTORS & ACCESSORIES Find Datasheets Online PIN & SOCKET CONNECTORS 0.125” 3.18 POWER CONNECTOR KIT K-225 TRIM TRIO RECTANGULAR SELF-MOUNTING PLASTIC

STD-020C

Abstract: APM9926C APM9926CCG m9926
Contextual Info: M9926CCG Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 8 20V/5A , RDS ON =25mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • • • 6 5 1 Super High Dense Cell Design 2 3 Reliable and Rugged 4 Lead Free Available (RoHS Compliant)