M65S Search Results

Contextual Info: INTERNATIONAL R E C T IF IE R 73C D M65SM5S QQOinSöl □ • IN R T r 3 -5 .7 :/? Data Sheet No. PD-3.179 INTERNATIONAL RECTIFIER 38 OPJT ^ 3SOP9JTT-ASERIES 1EOO and 1 4 0 0 Amp Major Ratings and Characteristics 320PJT200 32 0 P J T 2 5 0 •t R M S 'T ( A V )

16Kx32

Abstract: M65S
Contextual Info: INTEGRATE» DEVICE 47E J> Hi 4525771 GülOCm 16K x 32 BiCMOS/CMOS STATIC RAM MODULE IDT7MP4031 [H Integrated Device Technology, Inc. FEATURES: 0 9 DESCRIPTION: • • • • High density 512K static RAM module Low profile 64 pin ZIP Zig-zag In-line Package

IR6000

Abstract: IR-6000
Contextual Info: Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR6000 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmft Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and

Contextual Info: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while

Contextual Info: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45Í2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: 4BSS4S2 DD1S13D 131 • INR PD-9.738 International i»R Rectifier _IRFI634G HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

diagram of epson t13 printer

Abstract: 1d000000 dg1u 85C230 M5257 i1580
Contextual Info: SINGLE-CHIP SYSTEM CONTROLLER IDT79R3715 ADVANCE INFORMATION Integrated D evice T echnology, Inc. FEATURES • • • • • • System C ontroller for the pin-com patible IDT R30xx fam ily of processors DRAM C ontroller - 1 - 40 MB directly, 1 - 3 banks directly

2N7221 JANTX

Abstract: IQR 2400 2N7221 IRFM340 JANTXV2N7221
Contextual Info: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER \ I & R \ REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM34Q 2 INI7221 JANTX2N7221 JANTXV2N7221 [REF: MIL-S-195QO/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

Contextual Info: Bulletin 125181 IB International Rectifier sn 73s s e r ie s INVERTER GRADE THYRISTORS Stud Version Features 175A • All diffused design ■ C enter am plifying gate ■ G uaranteed high dv/dt ■ G uaranteed high di/dt ■ High surge current ca p a bility

Contextual Info: INTERNATIONAL r e c t i f i e r bSE » 4Û5S455 O GITG'iG PD-2.287 International SRectifier 11D Q 03 11D Q 04 SCHOTTKY RECTIFIER 1.1 Amp Description/Features Major Ratings and Characteristics Characteristics 11DQ. Units F(AV R *ctan0ular waveform 1.1 A

Contextual Info: l4 ä S 5 l4S2 International ^Rectifier fl3 4 • IN R PD-9.3240 IRF820 INTERNATIONAL HEXFET P o w e r M O S F E T • • • • • 001477b RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

E78996

Abstract: E78996 rectifier module B40HF R40H
Contextual Info: International ^R ectifier • INTERNATIONAL RECTIFIER s e r ie s DIODES bSE ]> B40HF/B40HH Power Modules in B-package 40A Features ■ ■ ■ ■ ■ ■ ■ 4A55M52 QQlhSMh Q1T ■ Electrically isolated base plate 3500V RMS Available up to 1200 V RRM, V QRM

JMK105BJ225M

Abstract: diode D7 DC 12V layout amplifier mp3 player usb MAX8821 C1005X5R0J105K
Contextual Info: 19-4085; Rev 0; 4/08 MAX8821 Evaluation Kit The MAX8821 evaluation kit EV kit is a fully assembled and tested circuit for evaluating the MAX8821 white LED charge pump with a mono Class D audio amplifier and dual LDOs. The MAX8821 EV kit operates from a 2.7V to 5.5V input supply range and is controlled by an

Contextual Info: Provisional Data Sheet No. PD-9.1312 International !Rectifier [TOR IRHF9230 HEXFET TRANSISTOR -200 Volt, 0.8Û , RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technol­ ogy HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation

MAX8893

Abstract: FDC6305 M65S-R220-11-01W AU-Y1007-R au-y1006-r 67643-3911 VLCF-4028T VLCF402 AU-Y1006 MAX8893C
Contextual Info: 19-5068; Rev 0; 12/09 MAX8893 Evaluation Kit The MAX8893 evaluation kit EV kit is a fully assembled and tested PCB that demonstrates the highly integrated MAX8893C power-management IC. The MAX8893 EV kit operates from a 2.7V to 5.5V input supply range and is

NHSW046AT

Abstract: JMK105BJ105K up down timers NHSW046A CMDSH05-4 GMK107BJ105K led module 20 pin pcb header connector
Contextual Info: 19-4455; Rev 0; 2/09 MAX8831 Evaluation Kit Features ♦ 28V Step-Up DC-DC Converter The MAX8831 evaluation kit EV kit is a fully assembled and tested PCB for evaluating the MAX8831 white LED step-up converter. The MAX8831 EV kit operates from an input supply range of 2.7V to 5.5V and is controlled

3S771

Contextual Info: INTEGRATED DEVICE M7E D H 4Û2S771 001014-7 =1 O I D T . IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEA TU RES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JED EC standard for future monolithic

Contextual Info: Provisional Data Sheet No. PD - 9.1299A International I R Rectifier IRHM9250 IRHM93250 R E P E T I T I V E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P -C H A N N E L RAD HARD -200 Volt, 0.315ft, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

Contextual Info: FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER IDT54/74FCT162H272AT/CT/ET ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: multiplexers for use in synchronous memory interleaving applications. All registers have a common clock and use a clock enable CExxx on each data register to control data

Contextual Info: MfiSSMSE 0015442 bTb « I N R PD-9.820 International k ?r Rectifier _ IRFP048 HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Ease of Paralleling