M65S452 Search Results

IR6000

Abstract: IR-6000
Contextual Info: Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR6000 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmft Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and

Contextual Info: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while

Contextual Info: 4BSS4S2 DD1S13D 131 • INR PD-9.738 International i»R Rectifier _IRFI634G HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

Contextual Info: Bulletin 125181 IB International Rectifier sn 73s s e r ie s INVERTER GRADE THYRISTORS Stud Version Features 175A • All diffused design ■ C enter am plifying gate ■ G uaranteed high dv/dt ■ G uaranteed high di/dt ■ High surge current ca p a bility

E78996

Abstract: E78996 rectifier module B40HF R40H
Contextual Info: International ^R ectifier • INTERNATIONAL RECTIFIER s e r ie s DIODES bSE ]> B40HF/B40HH Power Modules in B-package 40A Features ■ ■ ■ ■ ■ ■ ■ 4A55M52 QQlhSMh Q1T ■ Electrically isolated base plate 3500V RMS Available up to 1200 V RRM, V QRM

Contextual Info: Provisional Data Sheet No. PD-9.1312 International !Rectifier [TOR IRHF9230 HEXFET TRANSISTOR -200 Volt, 0.8Û , RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technol­ ogy HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation