M29W64 Search Results

M29W640DB

Abstract: M29W640D M29W640DT A0-A21 6A000
Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read ■ – VPP =12 V for Fast Program (optional) ACCESS TIME: 90 ns

M29W640

Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

C1648

Abstract: M29W641D M29W641DH M29W641DL M29W641DU M29W64
Contextual Info: AN1648 APPLICATION NOTE Software Drivers for the M29W641D Flash Memory CONTENTS • THE M29W641D PROGRAMMING MODEL – Bus Operations Commands and – Status Register – A Detailed Example ■ HOW TO USE THE SOFTWARE DRIVER – General Considerations – Porting The Drivers To

A0-A21

Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48
Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

M29W640GT70

Abstract: micron nor Flash M29W640GT70N3F M29W640GH7 M29W640GL70Z A2112
Contextual Info: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Common flash interface – 64-bit security code • 128-word extended memory block – Extra block used as security block or to store additional information

M29W640D

Abstract: A0-A21 M29W640DB M29W640DT
Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 90 ns

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA Features Summary • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ

Numonyx

Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48 A0-A21
Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

M29W640GB

Abstract: M29W640GT M29W640GL
Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) FBGA TSOP48 (NA)

Contextual Info: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640FT, M29W640FB Features • UNLOCK BYPASS PROGRAM command – Faster production/batch programming • VPP/WP# pin for fast program and write protect • Temporary block unprotection mode

st m29w640gb

Abstract: M29W640GL Led matrix 8x8 M29W640GT 640g morocco M29W640GB M29W640GH TFBGA48 TSOP56 M29W640GT70
Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

2200H

Abstract: EN29GL064 M29W640 M29W640GT M29W640GH M29W640GL
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/B vs NUMONYX Flash M29W640GH/L/T/B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 07/21

Contextual Info: M29W641DH, M29W641DL M29W641DU 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)

Contextual Info: M29W641DH, M29W641DL M29W641DU 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29W641DH, M29W641DL M29W641DU 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)

A0-A21

Abstract: M29W641D
Contextual Info: M29W641D 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output – VPP =12 V for Fast Program (optional)

M29W640FB

Abstract: M29W640 A0-A21 JESD97 M29W640F M29W640FT TFBGA48
Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary Figure 1. Packages Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read

Contextual Info: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Common Flash interface – 64-bit security code • 128-word extended memory block – Extra block used as security block or to store additional information

3F8000H-3FFFFFH

Contextual Info: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature • Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read

M29W640

Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns