M 514256 Search Results

514256

Abstract: 514256A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MCM94256 256K x 9 Bit Dynamic Random Access Memory Module The M CM 94256 is a 2.25M dynam ic random access m em ory DRAM module organized as 262,144 x 9 bits. The module is a 30-lead single-in-line m em ory module (SIM M) consisting of tw o M C M 514256A DRAMs housed in 20/26 J-lead

m514256

Abstract: M514256A 514256A
Contextual Info: HM514256A/AL Series 262,144-Word x 4-Bit C M O S Dynamic RAM • DESCRIPTION M 514256A /A LP Series The Hitachi H M 514256A/AL is a C M O S dynamic R A M organized 262,144-word x 4-bit. H M 514256A/AL has realized higher density, higher performance and various

514256-10

Abstract: HM514256 hitachi HM514256
Contextual Info: HM514256 Series 262144-word x 4-bit CMOS Dynamic RAM T h e H itachi H M 5 1 4 2 5 6 Series is a C M O S d y n a m ic R A M o r ­ ganized 2 6 2 1 4 4 -w o r d x 4-bit. H M 514256P Series H M 5 1 4 2 5 6 has realized higher density, higher perform ance and variou s fu n c tio n s b y e m p lo y in g

514256

Abstract: 514256A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MCM36512 512K x 36 Bit Dynamic Random Access Memory Module The M CM 36512 is an 18M dynam ic random access m em ory DRAM module organized as 524,288 x 36 bits. The module is a 72-lead double-sided single-in-line m em ory module (SIMM) consisting of sixteen M C M 514256A DRAMs housed in 20/26

Contextual Info: 524,288 W O R D S x 32 BIT D Y N A M IC R A M M O D U L E DESCRIPTIO N T he TH M 325120BS/BSC/AS/ASG is a 524,288 words by 32 b its dynam ic RAM m odule w hich assem bled 16 pcs of T C 514256A J/B J on the p rin te d circu it board. T hese m odules can be as w ell used

MCM514256A-10

Abstract: MCM514256AP10 MCM514256AJ80 MCM514256AZ80 MCM514256AJ70 CM514256 MCM51L4256A-80 M514256A MCM514256AJ10 MCM51L4256
Contextual Info: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA MCM514256A MCM51L4256A Advance Information 2 5 6 K X 4 CMOS Dynamic RAM P PACKAGE PLASTIC CASE 738A T h e M C M 514256A is a 1.2p C M O S high-speed, d y n a m ic random access m e m o ry. It is organized as 262,144 fo u r-b it w o rd s a n d fa b ric a te d w ith C M O S silic o n -g a te process te c h ­

514256

Abstract: HM514256 m514256 M 514256 hitachi HM514256 514256P HM514256-10
Contextual Info: Preliminary H M 514256 S e rie s 262144-word x 4-bit CMOS Dynamic Random Access Memory The Hitachi H M 5 1 4 2 5 6 Series is a C M O S dynam ic R A M or­ ganized 262144-w ord x 4-bit. H M 5 1 4 2 5 6 has realized higher density, higher performance and various functions by em ploying

Contextual Info: O K I semiconductor MSC2330A-XXYS4/KS4_ 524 ,28 8 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T h e O ki M S C 2 3 3 0 A -x x Y S 4 /K S 4 is a fully decoded, 5 2 4 ,2 8 8 word x 8 bit C M O S dynam ic random access m emory com posed of four 1Mb D R A M s in SOJ M M 514256A JS . T h e m ounting of four SOJs

M514256B

Abstract: *m514256B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro­

Contextual Info: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M S C 2333B -xxY S 16/D S 16 is a fully d eco d ed 524,288-w o rd x 32-b it CM OS D ynam ic R an dom A ccess M em ory M odule com p osed of sixteen 1-Mb D RAM s in SOJ M M 514256B p ack ages m ounted

YS16

Abstract: JTS5
Contextual Info: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2333B-xxY S16/D S16 is a fully decoded 524,288-w ord x 32-bit CM O S D ynam ic Random Access M em ory M odule com posed of sixteen 1-Mb DRAM s in SOJ M M 514256B packages mounted

MSM51C256A

Abstract: MSC2321B-70YS18
Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/DS18 is a fully decoded 524,288-w o rd x 36-bit CMOS D ynam ic R andom Access M em ory M odule com posed of sixteen 1-Mb DRAMs in SOJ M M 514256B packages an d eight

SM511

Contextual Info: DRAMS 1-MEG DRAMS Pins / Package Configuration M SM 5 11 6 64 B-XX Fast page 4 0 / D IP 64K x 16 80 M M 514256C -X X Fast page 2 0 / DIP, Z IP 256K x 4 60,70,80 1 -M e g x 1 60,70, 80 Pins / Package Configuration Access Time M ax ns 64/SSO P 128K x 32 45,50

514256A

Abstract: 514256a-10 TCWP HM514256AP
Contextual Info: H M 5 1 4 2 5 6 A P I / A J P I / A Z P I - 6 / 7 / 8 / 1 0 / 1 2 — P relim inary Extended Temperature Range Version 262.144-Word x 4-Bit Dynam ic Random Access Memory • DESCRIPTION Th e Hitachi H M 514256A is a C M O S dynam ic RAM organized 262.144-word x 4-bit. H M 514256A has realized higher density,

MSM514256

Abstract: msm514256a MSM514256A-70
Contextual Info: 4tE OKI D • b724240 O K I 0D0RS4Ô M^T H O K I J SEMICONDUCTOR GROUP semiconductor MSM514256A_ J - '2-3-17 262 ,14 4 -WORD x 4-BITS DYNAMIC RAM GENERAL DESCRIPTION The M S M 514256A isanew generation dynam ic RAM organized as 262,144 words by 4 bits. The technology

m514256

Abstract: M514256A MCM514256AP70 M514256A-80 MCM514256AP80 MCM514256AJ70 M514 MCM514256AJ70R2 M51425 L42S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256A MCM51L4256A 256K x 4 Bit CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The M C M 514256A is a 1 .0 ^ CM OS high-speed dynam ic random access memory. It is organized as 262,144 four-bit w ords and fabricated w ith C M OS silicon-gate pro­

514256a

Abstract: L1AA MCM514256 MCM51L4256
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit CMOS Dynamic RAM MCM514256A MCM51L4256A Page Mode, Commercial and Industrial Temperature Range T h e M C M 5 1 4 2 5 6 A is a 1 .On C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m e m o ry .

Contextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2320B-xxY S9/D S9 is a fully decoded 262,144-w ord x 36-bit CM OS Dynamic Random Access Memory M odule . It is com posed of eight 1-Mb DRAM s in SO J M M 514256B packages, and four 256Kb

m514256

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256A MCM51L4256A 256K x 4 Bit CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range T h e M C M 5 1 4 2 5 6 A is a 1 .0 n C M O S h ig h -s p e e d d y n a m ic r a n d o m a c c e s s m e m o ry .

m514256a

Contextual Info: HM514256A/AL Series 262,144-Word x 4-Bit CM O S Dynamic RAM • DESCRIPTION HM514256A/ALP Series The Hitachi M 514256A/AL is a C M O S dynamic RAM organized 262,144-word x 4-bit. M 514256A/AL has realized higher density, higher performance and various functions by employing 1.3 jj.m C M O S technology and some new C M O S circuit de­

223K

Abstract: 824k
Contextual Info: @ 10 DC 0K Hz MA RES XI IST MU A M NC O E IN HM CR S CU E M RR E N EN TA T L CU (m A) RR MA E XI NT MU R M ATI (m NG SR A) F TY PI CA L (M Hz ) IN D (µ UCT H) A ± NC 10 E % NU MB ER High Current Surface Mount Power Inductors PA RT Series 5142 SERIES 5142 FERRITE CORE

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

Contextual Info: @ 10 DC 0K Hz MA RES XI IST MU A M NC O E IN HM CR S CU E M RR E N EN TA T L CU (m A) RR MA E XI NT MU R M ATI (m NG SR A) F TY PI CA L (M Hz ) IN D (µ UCT H) A ± 1 NC 0% E NU MB ER High Current Surface Mount Power Inductors PA RT Series 5142 SERIES 5142 FERRITE CORE

Contextual Info: @ 10 0K DC Hz MA RES XI IST MU A M NC O E IN HM CR S CU E M RR E N EN TA T L CU (m A) RR MA E XI NT MU R M ATI (m NG SR A) F TY PI CA L (M Hz ) IN D (µ UCT H) A ± 1 NC 0% E NU MB ER High Current Surface Mount Power Inductors PA RT Series 5142 SERIES 5142 FERRITE CORE