impatt diode
Abstract: impatt diode operation IMPATT GaAs impatt diode
Contextual Info: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0
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ods-275ods-111ods-92ods-940+4impatt diodeimpatt diode operationimpattgaas impatt diode
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varactor diode capacitance measurement
Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
Contextual Info: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY
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MA46600
Abstract: MA46601 MA46602 MA46603 MA46604 MA46605 MA46607 impatt
Contextual Info: M/A-COM SEfllCOND-.BRLNGTON 11 » Sb42214 0GG1234 2 «MIC - T - 07- 11 s y m MA46600 Series GaAs Tuning Varactors Features • HIGHEST Q ■ LARGE CAPACITANCE VARIATION WITH VOLTAGE ABRUPT JUNCTION ■ CUSTOM TAILORED DESIGNS AVAILABLE ON REQUEST Applications
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sb42214ma46600ma46601ma46602+5ma46603ma46604ma46605ma46607impatt
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MICROWAVE ASSOCIATES
Abstract: IMPATT
Contextual Info: INTRODUCTION This catalog of microwave and RF semiconductor products from M/A-COM Burlington Semiconductor Operations represents more than 40 years of world leadership in supplying the industry with high performance, high quality semiconductor products. The technology
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45200
Abstract: impatt diode IMPATT
Contextual Info: A fo C O W m an A M P com pany Abrupt Tuning Varactors MA45200 Series V 2.00 Case Styles Features • High Q £. • Low Leakage • A vailable in Chip Form • A vailable in C eram ic P a ck a g es • Low Post T u n in g Drift • Freq u en cy R an ge VHF - K u -B an d
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MA460
Abstract: APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation
Contextual Info: jyfocôYi MA46021-MA46049 Series CW Gallium Arsenide IMPATT Diodes 0.5-4 Watts C,X, and Ku-Band Features • DIRECT CONVERSION FOR DC TO RF WITH >15% EFFICIENCY LOW-HIGH-LOW ■ DIRECT CONVERSION FOR DC TO RF WITH > 10% EFFICIENCY (FLAT PROFILE) ■ LOW AM AND FM NOISE
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ma46021-ma46049ma46030ma460apc7 connector+5impatt diodea4602a4604impattimpatt diode operation
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IMPATT
Abstract: L4142
Contextual Info: ML 4000 SERIES GALLIUM ARSENIDE IMPATT DIODES Gallium Arsenide Im patt Diodes are available as flat profile, high low profile and low high low profile devices. These term s describe the doping profile in the active region o f the device. For high low and low high low profiles the avalanche region is more closely confined in the region o f peak electric
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AH720
Abstract: w4 DIODE impatt AH751 impatt diode
Contextual Info: AH720.AH741/AH750.AH771 G aAs IMPATT P O W E R G E N E R A T I O N D I O D E S FEATURES O perating fre que ncy range : 10, 14, 16G H z C ase style: W 4 E m itting p o w e r : 2 to 5W atts A P PL IC A TI O N S T h e IM P A T T d io d e s are s u ita b le fo r u s e as
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ah720ah741/ah750ah771ah741+5/ah750w4 diodeimpattah751impatt diode
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impatt diode
Abstract: MA460 IMPATT GaAs impatt diode MA46019-MA46048 030NH MA46046 radar impatt MIL-STD-750 METHOD 1031 MA46019
Contextual Info: MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY ■ HIGH & LOW DUTY CYCLE OPERATION
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ma46019-ma46048impatt diodema460impatt+6gaas impatt diode030nhma46046radar impattmil-std-750 method 1031ma46019
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impatt diode
Abstract: apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962
Contextual Info: H E W L E T T ^ PA CK ARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 5082-0607 5082-0608 DIODES 5.9-8.4GHZ Features IMPATT AND STEP RECOVERY HIGH POWER O U TP U T Typically: 3W from 5.9 to 8.4 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IE N T OPERATIO N
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mil-s-19500impatt diodeapc-7 connectorz 0607+7cw doppler radarimpattradar impattan-968cw dopplerimpatt diode operationan962
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IMPATT
Abstract: diode gunn SA impatt diode
Contextual Info: INTRO DUC TIO N TCS PROFILE L E A D E R S H IP It ha s b e e n 2 0 y e a rs s in c e T H O M S O N C S F S E M IC O N D U C T E U R S S P E C IF IQ U E S TC S m a nufa cture d its firs t G aA s FE T (Field E ffect T ransistor). T h rou ghou t this period, TCS
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MC-422000A36
Abstract: MC422000A36
Contextual Info: NEC NEC Electronics Inc. MC-422000A36 2,097,152 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-422000A36 is a fast-page dynamic RAM mod ule organized as 2,097,152 words by 36 bits and de signed to operate from a single +5-volt power supply.
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hp 5082 step recovery
Abstract: HP 5082-0113 HP STEP RECOVERY DIODES 5082-0151 1N5164 1N5163 1430C 5082-0800 hp 5082-0151 1N4547
Contextual Info: STEP RECOVERY DIODES COMPONENTS Features AND STEP RECOVERY OPTIMIZED FOR BOTH LOW AND HIGH ORDER MULTIPLIER DESIGNS FROM UHF THROUGH Ku BAND PASSIVATED CHIP FOR MAXIMUM STABILITY AND RELIABILITY AVAILABLE IN A VARIETY OF PACKAGES SPECIAL ELECTRICAL SELECTIONS AVAILABLE
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mil-s-19500hp 5082 step recoveryhp 5082-0113hp step recovery diodes+75082-01511n51641n51631430c5082-0800hp 5082-01511n4547
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Z7220A
Abstract: RF2065 128X14 LT 7220
Contextual Info: Zilog October 1988 D escription The Z7220A High-performance Graphics Display Con troller HGDC is an intelligent microprocessor peripheral designed to be the heart of a high-performance rasterscan computer graphics and character display system. Positioned between the video display memory and the
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transformador
Abstract: potenciometro ajustable 2k TTH300 POTENCIOMETRO 2k NORMAS ATEX PARA CONTROL DE PROCESOS Carimbo SENSOR DE TEMPERATURA transformador electrico ABB12A EC certificate PTB ATEX 1144 X
Contextual Info: CI/TTF350-X1 Inbetriebnahmeanleitung Temperatur-Messumformer für Feldmontage TTF350 Commissioning Instructions Field-mounted temperature transmitters TTF350 Notice de mise en service Convertisseurs de mesure de température pour montage local TTF350 Instrucciones para la puesta en
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ci/ttf350-x1ttf350transformadorpotenciometro ajustable 2k+8tth300potenciometro 2knormas atex para control de procesoscarimbosensor de temperaturatransformador electricoabb12aec certificate ptb atex 1144 x
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Gunn Diode
Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
Contextual Info: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property
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gunn diodegunn diode oscillatorgunn diode generatorgunn diode at power supply circuit+6two cavity resonatorgaas gunn diode 24gaas gunn diodeimpattvaractor diode for x band radardiode th 5 n
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DIL Reed relay RS -349-399
Abstract: LK NES IEC 292-1 ECG transistor replacement guide book free electrode oven calibration certificate formats dl-1d31 1a. 250v /reed relay rs 349-355 LCD LM 225X Ferroxcube pot core 6656 Semicon volume 1 l/DIL Reed relay RS -349-399 Siemens Optoelectronic Data Book
Contextual Info: Issued November 1987 8420 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system
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dil reed relay rs -349-399lk nes iec 292-1ecg transistor replacement guide book freeelectrode oven calibration certificate formats+6dl-1d31 1a. 250v /reed relay rs 349-355lcd lm 225xferroxcube pot core 6656semicon volume 1l/dil reed relay rs -349-399siemens optoelectronic data book
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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gfb7400dfey101btca290arifa pmr 2026+6ef184orp52mullard mullard quick reference guidegzf1200itt a2610yd 6409
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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zop033zop035zop036zop037+16zop038zop039zop045zop042zop041zop043jrc 45600yd 803 sgs45600 jrctda 7277tda 5072krp power source sps 63602904 jrcsonysha t90 saphilips hfe 4541
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missile seeker
Abstract: police radar detector police radar detector detector m/a-com impatt police radar detector local oscillator frequency seeker gunn diode x band radar 46470 model impatt MA45234
Contextual Info: M/ A - C O M S E M I C O N D t B R L N G T O N /ysKcm 11 _ ] > • S b M 2 2 1 M 00 ]:L2M2 1 ■ M I C ' . . . " MA45200 Series Silicon Abrupt Junction Tuning Varactors Features ■ HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM ■ AVAILABLE IN CERAMIC PACKAGES
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sbm22140g01s42ma45200missile seeker+9police radar detectorpolice radar detector detectorm/a-com impattpolice radar detector local oscillator frequencyseekergunn diode x band radar46470 modelimpattma45234
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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ma40401ma40402ma40404ma40405+12ma40406ma40408diode cross referenceschottky diode cross referencemv3110ah513ah761ah512impatt diodegunn diodeah370dmk-6606
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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ot239bt100a 02cqx82atrio ta 80w+6cv7351zp1481cv2154zp1430triac mw 151 500rpl5727
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stepping motor EPSON EM - 234
Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
Contextual Info: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system
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rs232rs232cstepping motor epson em - 234epson motor em 402+8induction cooker fault finding diagramsecg transistor replacement guide book freestepping motor epson em 234stepping motor epson em 331s576btransistor d389maranyltms1601a
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