SB42214 Search Results

impatt

Abstract: Gunn Diode MA45338 IMPATT Diode stub tuner waveguide MA45330 MA45331 MA45332 MA45333 MA45334
Contextual Info: M/ A- CO H S E U I C O N D n B R L N G T O N Ajm 11 D Sb42214 G0D12S0 0 H M I C 1-0 MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors * V Features • HIGH Q ■ LOW LEAKAGE ■ LOW POST TUNING DRIFT ■ CUSTOM DESIGNS AVAILABLE ■ FREQUENCY RANGE THROUGH

MA46600

Abstract: MA46601 MA46602 MA46603 MA46604 MA46605 MA46607 impatt
Contextual Info: M/A-COM SEfllCOND-.BRLNGTON 11 » Sb42214 0GG1234 2 «MIC - T - 07- 11 s y m MA46600 Series GaAs Tuning Varactors Features • HIGHEST Q ■ LARGE CAPACITANCE VARIATION WITH VOLTAGE ABRUPT JUNCTION ■ CUSTOM TAILORED DESIGNS AVAILABLE ON REQUEST Applications

JAN1N23WG

Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Contextual Info: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED

MA4853

Abstract: all diodes ratings
Contextual Info: M/A-COM A SEMICONDtBRLNGTON l^ s V 11 D • 5b45214 D0G132Ö G ■MIC n T-07-07 Axial Lead Glass Packaged Silicon Schottky Mixer Diodes Features ■ HIGH RELIABILITY ■ SCREENING TO JANTXV LEVEL AVAILABLE f t= 7 /= 54 ' - \ J ■ LOW, MEDIUM AND HIGH BARRIER

MA4E917

Abstract: 00G132 MA4E913
Contextual Info: M/A-COn SEMICOND-.BRLNGTON 11 D • SbM2214 D0D1322 T H m e Ajfocam T - 07 -o y Ceramic Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ CAN BE SCREENED TO JANTXV LEVELS ■ UNIFORM RF CHARACTERISTICS Applications

MA40092

Contextual Info: M/ A- CO N S E M I C O N D n B R L N G T O N 11 ]> • 5b42S14 GOGIETE S ■ M I C Stripline Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER

IN 4002 MIC diode

Abstract: MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15
Contextual Info: M/A-COM SEMICONDnBRLNGTON ApKcm 11 D • SbM2E14 GD0113M T ■MIC Axial Lead PIN Diodes Features ■ GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES

Contextual Info: n/A-CON SEMICONDnBRLNGTON 11 D S b l4 2 S m 0G0134Û b • MIC / - O 7 ^ -6 7 /M W Zero Bias Detector Diodes Features ■ CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS

MA4ST520D

Abstract: MA4ST520 MA4ST520A MA4ST520B MA4ST520C MA4ST522 MA4ST522A MA4ST522B MA4ST522C
Contextual Info: M/ A- CO M S E M I C O N D t B R L N G T O N 11 D • 5b422m 0001200 1 ■ M I C \ M A 4 ST 52 0/M A 4ST 53 0 Serie s UHF9VHF Silicon Hyperabrupt Tuning Varactors Features ■ A SUPERIOR ION IMPLANTATION PROCESS RESULTS IN MORE REPEATABLE C-V CHARACTERISTICS

Gunn Diode

Abstract: MA46450 MA46470 gunn diodes MA46451 MA46452 MA46454 MA46455 MA46480 0QQ12
Contextual Info: M/A-CON SEMICOND-.BRLNGTON 11 D • 5bM22m QQ01S2b 3 M M I C ^ _ c><7„ /? yflMCDM MA46450 through MA46480 Series — 1.00 and 1.25 Gamma GaAs Hyperabrupt Tuning Varactors Features ■ CONSTANT GAMMA = 1.0 OR 1.25 ■ HIGH Q UP TO 4000 AT - 4 VOLTS ■ LARGE CAPACITANCE CHANGE WITH

FET transistors with s-parameters

Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
Contextual Info: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X

1N5165

Contextual Info: n/ A- COM S E M I C O N D i B R L N G T O N A ju t m 11 V WÊ S b 4 2 E 1 4 GD01344 1 • M I C '-p ■ Axial Lead Glass Packaged Schottky Diodes Features ■ PICOSECOND SWITCHING ■ JANTX/JANTXV SCREENING AVAILABLE ■ LOW FORWARD VOLTAGE DROP ■ LOW REVERSE LEAKAGE