LOW NOISE TRANSISTOR Search Results

transistor 2sc2240

Abstract: 2SC2240 120PI
Contextual Info: LOW NOISE AUDIO AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 5JMAX. The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise.

smd code marking TV sot23

Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 sot-23 MARKING CODE N C smd transistors BCF70 marking p1r
Contextual Info: Low Noise SMD" Transistors Low Noise SMD Transistors Description Mechanical Data Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed low-current

Contextual Info: BFR380L3 Linear Low Noise Silicon Bipolar RF Transistor • High current capability and low noise figure for wide dynamic range • Collector design supports supply voltage up to 5V • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz

"Microphone Preamplifier"

Abstract: Microphone Preamplifier high gain audio mixer bipolar audio preamplifier high performance audio preamplifier hi-fi preamplifier low voltage Microphone Preamplifier microphone preamplifier
Contextual Info: Sound Pream plifier SP2 Low noise balanced input m icrophone pream plifier G en eral d escrip tio n The SP2 is a high perform ance low noise microphone preamplifier. Designed for professional audio m ixer w ith very low noise channels. F eatures Low noise bipolar transistors and input resistors

KTC3200

Abstract: KTc3200 BL rg 625 KTA1268 kta-1268
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3200 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • The KTC3200 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal

high performance audio preamplifier

Abstract: 1512P SSM2019 variable gain audio preamplifier INA217 equivalent phantom power supply 48v THAT 1512 THAT 1510 INA163 INA217 SSM2017
Contextual Info: Low-Noise, High Performance Audio Preamplifier IC THAT 1510, 1512 FEATURES APPLICATIONS • Low Noise: 1 nV/√Hz input noise 60dB gain 34 nV/√Hz input noise (0dB gain) (1512) • Differential Low Noise Preamplifiers • Low THD+N (full audio bandwidth):

1512

Abstract: Input Stages Preamplifiers 1510/1512
Contextual Info: Low-Noise, High Performance Audio Preamplifier IC THAT 1510, 1512 FEATURES APPLICATIONS • Low Noise: 1 nV/√Hz input noise 60dB gain 34 nV/√Hz input noise (0dB gain) (1512) • Differential Low Noise Preamplifiers • Low THD+N (full audio bandwidth):

2SA847

Abstract: 2SA847A knx-1 low noise preamplifier knx1
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse

KTC3200

Abstract: lowest noise audio NPN transistor ktc3200 KTc3200 BL lowest noise audio NPN transistor rg 625 TRANSISTOR BL 100 KTA1268
Contextual Info: SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B C The KTC3200 is a transistor for low frequency and low noise applications. A This device is designed to ower noise figure in the region of low signal

Contextual Info: Low-Noise, High Performance Audio Preamplifier IC THAT 1510, 1512 FEATURES APPLICATIONS • Low Noise: 1 nV/√Hz input noise 60dB gain 34 nV/√Hz input noise (0dB gain) (1512) • Differential Low Noise Preamplifiers • Low THD+N (full audio bandwidth):

Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

spice gummel

Contextual Info: BFR460L3 Low Noise Silicon Bipolar RF Transistor • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • Excellent ESD performance typical value 1500V HBM • High fT of 22 GHz

Contextual Info: BFP460 Low Noise Silicon Bipolar RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500 V HBM 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point

FPD7612P70

Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

KTC3200

Abstract: KTc3200 BL KTA1268 rg 625 transistor ktc3200 BL-350
Contextual Info: SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B C The KTC3200 is a transistor for low frequency and low noise applications. A This device is designed to ower noise figure in the region of low signal

FPD6836P70

Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

Contextual Info: BFR360L3 Low Noise Silicon Bipolar RF Transistor • Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small

Micro-X marking "K"

Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Contextual Info: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz

mgf4941al

Abstract: MITSUBISHI electric R22 GD-32
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure

Contextual Info: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB

GD-32

Abstract: mgf4941al fet K 727
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz

Contextual Info: Central" CMPT2484 Semiconductor Corp. NPN SILICON LOW NOISE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2484 type is an NPN silicon low noise transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise

FPD7612P70

Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

BFR380T

Abstract: GPS05996 TBD 135 Transistor
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Target Data • • • • High Current Capability and Low Noise Figure for Wide Dynamic Range Applications Low Voltage Operation Ideal for Low Phase Noise Oscillators up to 4 GHz Low Noise Figure : 1.4dB at 2.0GHz 2 1