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    1005FHL Search Results

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    1005FHL Price and Stock

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    Murata Manufacturing Co Ltd LL1005-FHL39NJ

    Inductor: ceramic; 39nH
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    TME LL1005-FHL39NJ 8,110 2,084
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    TOKO, Inc. LL1005-FHL33NJ

    Inductor RF Chip Multi-Layer 0.033uH 5% 100MHz 10Q-Factor Ceramic 0.2A 1Ohm DCR 0402 T/R
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    Bristol Electronics LL1005-FHL33NJ 96,783
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    Murata Manufacturing Co Ltd LL1005-FHL15NJ

    Inductor RF Chip Multi-Layer 0.015uH 5% 100MHz 9Q-Factor Ceramic 0.3A 0.5Ohm DCR 0402 T/R
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    Bristol Electronics LL1005-FHL15NJ 57,837
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    Murata Manufacturing Co Ltd LL1005-FHL1N8S

    Inductor RF Chip Multi-Layer 0.0018uH 0.3nH 100MHz 8Q-Factor Ceramic 0.5A 0.14Ohm DCR 0402 T/R
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    Bristol Electronics LL1005-FHL1N8S 52,715
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    TOKO, Inc. LL1005-FHL2N2S

    Inductor RF Chip Multi-Layer 0.0022uH 0.3nH 100MHz 8Q-Factor Ceramic 0.5A 0.15Ohm DCR 0402 T/R
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    Bristol Electronics LL1005-FHL2N2S 45,811
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    1005FHL Datasheets Context Search

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    FPD7612P70

    Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
    Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original
    fpd7612p7022dbm85ghz24ghz+1011ghz0805-x7rhemt marking p1005fhlinp hbt transistor low noisepseudomorphic hemtrogers 4003inp transistor hemtds090629atc0805x7r PDF

    Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original
    fpd7612p7022dbm85ghz24ghz PDF