1005FHL Search Results
1005FHL Price and Stock
TOKO, Inc. LL1005-FHL33NJInductor RF Chip Multi-Layer 0.033uH 5% 100MHz 10Q-Factor Ceramic 0.2A 1Ohm DCR 0402 T/R |
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LL1005-FHL33NJ | 96,783 |
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Murata Manufacturing Co Ltd LL1005-FHL3N9SInductor RF Chip Multi-Layer 0.0039uH 0.3nH 100MHz 8Q-Factor Ceramic 0.5A 0.18Ohm DCR 0402 T/R |
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LL1005-FHL3N9S | 76,123 |
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Murata Manufacturing Co Ltd LL1005-FHL5N6SInductor RF Chip Multi-Layer 0.0056uH 0.3nH 100MHz 9Q-Factor Ceramic 0.4A 0.22Ohm DCR 0402 T/R |
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LL1005-FHL5N6S | 68,328 |
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Murata Manufacturing Co Ltd LL1005-FHL1N8SInductor RF Chip Multi-Layer 0.0018uH 0.3nH 100MHz 8Q-Factor Ceramic 0.5A 0.14Ohm DCR 0402 T/R |
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LL1005-FHL1N8S | 52,715 |
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Murata Manufacturing Co Ltd LL1005-FHL1N5SInductor RF Chip Multi-Layer 0.0015uH 0.3nH 100MHz 8Q-Factor Ceramic 0.5A 0.13Ohm DCR 0402 T/R |
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LL1005-FHL1N5S | 33,345 |
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1005FHL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FPD7612P70
Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
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FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz 11GHz) 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R | |
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Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications. |
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FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz |