LINEAR Search Results

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

Contextual Info: T O SH IB A TENTATIVE TC75W56FU TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75W56FU DUAL COMPARATOR TC75W56FU is a CMOS type general-purpose dual comparator capable of single power supply operation and using lower supply currents than the conventional bipolar

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

2sc1173

Abstract: 2SA473
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.

TCD1300D

Contextual Info: TOSHIBA TCD1300D TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1 3 0 0 D The TCD1300D is a high sensitive and low dark current 3648-elements linear image sensor. The sensor can be used for facsimile, imagescanner and OCR. The signal pre­ processing circuit which is composed of Sample and Hold

723da

Abstract: SNS512 SN7514L
Contextual Info: LINEAR INTEGRATED CIRCUITS TYPES SN5S12, SN5514. SN7512. SN7514 DIFFERENTIAL VIDEO AMPLIFIERS B U L L E T IN N O . D L -S 7 3 1 1496, A U G U S T 1 9 7 1 - R E V IS E D S E P T E M B E R 1973 • 80-MHz Bandwidth • Typical Differential Voltage Amplification of 300

Contextual Info: TOSHIBA TA8210AH/AL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8210AH, TA8210AL 20W BTLX2CH AUDIO POWER AMPLIFIER The thermal resistance dj-T of TA8210AH, TA8210AL package designed for low thermal resistance, has a high efficiency of heat radiation.

Contextual Info: TOSHIBA TENTATIVE TA8303F TO SH IBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA 8303F MOTOR DRIVER FOR CAMERA TA8303F is Multi Chip 1C incorporates 6 low saturation discrete transistors w hich equipped Bias resistor and FreeW heeling diode. This 1C is suitable for a camera use motor drive

ta8434f

Abstract: Fdd spindle motor circuit 300 Fdd spindle motor circuit
Contextual Info: - TA8434F TENTATIVE DATA SINGLE CHIP 3-PHASE MOTOR DRIVER FOR FDD SPINDLE MOTOR. The TA8434F is Single Chip Motor Driver IC for FDD Spindle Motor. . 1 Chip Motor Driver with 3-Phase Semi-Linear Driving . Adjustment Free with Digital Servo System

Contextual Info: T O SH IB A TA6009FN TO SH IBA BIPO LAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA6009FN SHOCK SENSOR IC Ich VERSION TA6009FN detects an existence o f external shock through t h p <;hnrk i p n i n r a n d n i i t n u t FEATURES • TA6009FN operates from 2.7 ~5.5 V DC single power

Contextual Info: TOSHIBA TENTATIVE TA8317F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP T A 8 i 1 7 F • m m m f ■ m m LED DRIVER FOR CAM ERA TA8317F is Multi Chip IC incorporates 6 low saturation discrete transistors which equipped bias resistor. This IC is suitable for a camera use LED drive

TLC5602

Abstract: 8 bit digital to analog converter
Contextual Info: TLC5602 LinEPIC" 8 BIT DIGITAL TO-ANALOG CONVERTER D 3 2 2 4 , FEBRUARY 1989 • 8-Bit Resolution • ± 0 .2 % Linearity • Maxim um Conversion Rate . . . 3 0 MHz Typ 2 0 M Hz Min D U A L-IN -LIN E P AC KAG E {TO P VIE W Analog Output Voltage Range of

S211 equivalent

Abstract: AFL1 S211
Contextual Info: T O SH IB A TA4011F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A A fl 1 1 F m m m • ■ ■ ■ UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Low Current Içç = 3.5mA • Wide Band f = 2.4GHz 3dB down • VCC = 1-5~3V Operating Supply Voltage

Transistor c 4138

Abstract: TIP36 Application Note RFK25 IRF540 p channel
Contextual Info: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

2SC3297

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage

Contextual Info: T O SH IB A TC75S54F TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75S54F SINGLE OPERATIONAL AMPLIFIER TC75S54F is a CMOS operational amplifier with low supply voltage, low supply current. FEATURES • Low supply voltage VDD = ±0.9~3.5V or 1.8-7 V

2sc1764

Contextual Info: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)

9701455-S-J1

Abstract: APH184C
Contextual Info: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps

Contextual Info: y UCC3996 U I M IT R O D E ADVANCE INFORMATION Dual Sequencing Hot Swap Power Manager FEATURES DESCRIPTION • Precise Linear Current Amplifier for high efficiency and low voltage drop The UCC3996 family of Hot Swap Power Managers provides hot swap control, fault handling and power supply sequencing of two positive sup­

Contextual Info: T O SH IB A 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V C E O = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (I q = 0.1mA) / hpg (I q = 2mA) = 0.95 (Typ.)

TCD131D

Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Contextual Info: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package