300NE Search Results

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

Contextual Info: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.)

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

A032b

Abstract: LC72700E LC72700G LV3400M ltkd BLN70 uo7k
Contextual Info: i i X a - KNo. N 4870E A / « / No. I = & m m = x- s y o // 4870E 60397 LC72700E C I C B LC72700G ' 80ttFM»BS8SS §fflLSl CMOS LSI LC72700E, 72700G(£, L S Iii, T f t fa ft F M £ £ FM □ > # ^ V V m # ^ b % h * m m m * 9 ' > a * J (D A R C fc £ « T 5 fc & 0 x . * - £ « H ffl LSTT: * S .

2N3904

Abstract: 2N3906 2N3906 JEDEC
Contextual Info: 4SE D • =10=17250 0017746 IT O S H b TOSHIBA TRANSISTOR 2N3906 SILICON PNP EPITAXIAL T Y P E PCT PROCESS ~> TOSHIBA ' T ■i (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV~“50nA(Max.)» lBEV=50nA(Max.)