LH532 Search Results

A14C

Abstract: LH53259 sharp mask rom
Contextual Info: LH53259 CMOS 256K 32K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 n-W (MAX.)

48-PIN

Abstract: A12C A15C LH532000B-1
Contextual Info: LH532000B-1 FEATURES CMOS 2M 256K x 8/128K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW f . 1• 2 a 7[= O E i/Ô Ë ^D C C

A1SH

Abstract: 32DIP 32-PIN LH532100B-1 A14C
Contextual Info: LH532100B-1 FEATURES CMOS 2M 256K x 8 Mask-Programmable ROM PIN CONNECTIONS • 262,144 words x 8 bit organization • Access time: 120 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW f \ O E ^ O E i/D C C • Static operation • TTL compatible I/O • Three-state outputs

48-PIN

Abstract: A10C A12C A15C LH532000B
Contextual Info: LH532000B FEATURES CMOS 2M 256K x 8/128K x 16 M ask-Program m able ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VI EW f 1• \ 40 ZI Ag a 7C 2 39 U Ag AgiZ

44-PIN

Abstract: LH532048 QFJ044-P-0650
Contextual Info: LH532048 • Access time: 100 ns MAX. 40-PIN DIP 40-PIN SOP TOP VIEW • Static operation NC 1 40 VCC CE 2 39 NC • TTL compatible I/O D15 3 38 A16 4 • Three-state outputs D14 37 A15 D13 5 36 A14 • Single +5 V power supply D12 6 35 A13 D11 7 34 A12

44-PIN

Abstract: LH5324500 LH5324500N
Contextual Info: LH5324500 FEATURES • 3,145,728 words x 8 bit organization Byte mode 1,572,864 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O

LH532

Contextual Info: PRELIMINARY LH532000B-S FEATURES • Low-power supply: 2.6 to 5.5 V • 262,144 x 8 bit organization Byte mode 131,072 x 16 bit organization (Word mode) • Access time: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < V cc < 5.5 V • Static operation

sharp mask rom 44-pin

Contextual Info: LH532000B FEATURES • Selectable memory organization: 262,144 x 8 bit byte mode 131,072 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 120/150 ns (MAX.) • CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM DESCRIPTION

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

A-1435

Contextual Info: LH532048 C M O S 2M 128K x 16 M ask-P ro g ram m ab le ROM FEATURES • 131,072 words x 16 bit organization • Access time: 100 ns (MAX.) PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW / • Static operation • TTL compatible I/O • Three-state outputs

Contextual Info: C M OS 2M 256K x 8 M ask-Program m able ROM FEATURES • 262,144 x 8 bit organization • Access time: 120/150 ns (MAX.) • Low power consumption: Operating: 275 mW (MAX.) DESCRIPTION The LH532100B is a mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using

flash 64m

Contextual Info: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161

LH53259

Abstract: LH53259D TSOP028-P-0813
Contextual Info: LH53259 FEATURES • 32,768 words x 8 bit organization • Access time: 150 ns MAX. • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW (MAX.) CMOS 256K (32K × 8) MROM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SOP NC 1 28 VCC A12 2

48-PIN

Abstract: LH532000B-1
Contextual Info: LH532000B-1 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • Mask-programmable control pin

Contextual Info: LH532000B-S FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V

Contextual Info: LH5324500 FEATURES CMOS 24M 3M x 8/1.5M x 16 MROM PIN CONNECTIONS • 3,145,728 words (Byte mode) x 1,572,864 words (Word mode) x 8 bit organization 44-PIN SOP TOP VIEW S 1• A-I8 C 2 43 — I a 19 A17IZ 3 42 ^ A8 • Access time: 150 ns (MAX.) a7C 4 41 Zl Ag

J-1100

Contextual Info: LH532100B-1 FEATURES • 262,144 words x 8 bit organization CMOS 2M 256K x 8 MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access time: 120 ns (MAX.) f • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 275 mW (MAX.)

Contextual Info: LH532000B-1 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.) • Mask-programmable control pin

532600-6

Abstract: A10C LH532600
Contextual Info: LH532600 CMOS 2M 256K x 8/12 8 K x 16 M a sk-P ro g ram m a ble ROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 4 0 -P IN D IP 4 0 -P IN S O P T O P V IE W N H I a 8 2 39 □

LH5324500

Abstract: LH5324500N as3145
Contextual Info: LH5324500 CMOS 24M 3M x 8/1.5M x 16 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 3,145,728 words x 8 bit organization (Byte mode) 44-PIN SOP r 1,572,864 words x 16 bit organization (Word mode) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 p-W (MAX.)

532600-6

Abstract: LH532600
Contextual Info: LH532600 CMOS 2M 256K x 8/128K × 16 MROM FEATURES PIN CONNECTIONS • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs

Contextual Info: LH532000B FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |iW (MAX.)

DIC14

Contextual Info: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. CMOS 2M (256K x 8) M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW s • Three-state outputs • Single +5 V power supply • Power consumption:

42-PIN

Contextual Info: LH5324A00 CMOS 24M 1.5M x 16 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,572,864 words × 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O