LEAD Search Results

Contextual Info: RN4604 RN4604 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm A N D DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in SM6 (Super Mini Type w ith 6 leads) • W ith B uilt-in Bias Resistors • Sim plify C ircuit Design • Reduce a Q uantity of P arts and M anufacturing Process

TC4538

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4538BP/BF TC4538BP/TC4538BF DUAL PRECISION RETRIGGERABLE/RESETTABLE MONOSTABLE MULTIVIBRATOR The TC4538BP/BF is the retriggerable/resettable monostable multivibrator and the trigger operation can be made at either the leading or trailing edge by

Contextual Info: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

dg1u

Abstract: TLP624
Contextual Info: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic

Contextual Info: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP

Contextual Info: SN74LVC540 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS JA N U A R Y 1993 • Space-Saving Package Option: Shrink Small-Outline Package DB Features EIAJ 0.65-mm Lead Pitch DB, DW, OR PW PACKAGE (TOP VIEW) • EPIC (Enhanced-Performance implanted CMOS) Submicron Process

optocoupler P 521

Abstract: 521 optocoupler 731 OPTOCOUPLER 64 LEAD DIP OUTLINE toshiba tlp
Contextual Info: 5 -2 Standard Lead Forming 5-2-1) SURFACE MOUNT LEAD BEND OPTIONS LF1) (LF4) (LF5) “ LF5 H f» Outline 8 pin 4 pin 4 • J t I A_a_a_a n a y uuy 3 1 4 16pin 6 pin • 5 4 Pi f l FI ¿ .a fi n n n n a U S“ B i u u u u u u u u > 3 i e oT he photocoupler line-up with lead ben­

TLP338

Contextual Info: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

Contextual Info: RN4611 RNA611} Unit in mm SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 A N D DRIVER CIRCUIT APPLICATIONS. 2 3 -0 .3 + 0.2 . - 1 6 Including Two Devices in SM6 (Super Mini Type with 6 leads With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

BYV27-50

Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
Contextual Info: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.

Contextual Info: SN74LVC841 10-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS M ARCH 1993 OB, DW, OR PW PACKAGE TOP VIEW • Space-Saving Package Option: Shrink Small-Outline Package (DB) Features EIAJ 0.65-mm Lead Pitch • EPIC (Enhanced-Performance Implanted

2N5222

Abstract: A6T5222 A6T52
Contextual Info: TYPES 2N5222, A6T5222 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 9 , M A R C H 1973 S IL E C T t T R A N S IS T O R S t • For RF Am plifier, Mixer, and Video IF Applications in Radio and Television Receivers • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N335

Contextual Info: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR U LL E T IN NO. DL-S 591038. M A R C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures nw chw ical data W eld ed ca se w ith g lass-to -m etal h erm etic seal betw een ca se an d lead s. U n it w eig h t is ap p ro x im a te ly

RJ635

Contextual Info: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

Contextual Info: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2N5227

Abstract: a5t5227
Contextual Info: TYPES 2N5227, A5T5227 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L S 731 1927, M A R C H 1973 S IL E C T t TR A N S IS TO R S ! • For Low-Level, Small-Signal, General Purpose Am plifier and Oscillator Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

Contextual Info: PHOTO RELAY TLP595G T L P 5 9 5 G TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595G consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.

Contextual Info: PHOTO RELAY TLP595B T IP 5 9 5 B TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.

Contextual Info: RN4991 RN4991 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm A N D DRIVER CIRCUIT APPLICATIO NS • Including Two Devices in US6 (U ltra Super M ini Type w ith 6 leads) • W ith B uilt-in Bias Resistors • Simplify C ircuit Design • Reduce a Q uantity of P a rts and M anufacturing Process

Contextual Info: CO NOTES: 1 .MATERIAL: HOUSiNG : THERMOPLASTIC CONTACT : COPPER ALLOY. SHELL : COPPER ALLOY. CD O O + ü 15.2 0 1 4.50 2 .FINISH: CONTACT: GOLD PLATING SEE TABLE ON CONTACT AREA TIN-LEAD ON SOLDER TAILS. NICKEL UNDERPLATED OVER ALL SHELL: NICKEL PLATING OVER COPPER.

RS5101

Abstract: TLP352
Contextual Info: GaAs IRED & PHOTO-TRIAC TLP3520A Unit in mm TRIAC DRIVER PROGRAMMABLE CONTROLLERS AC-OUTPIJT MODULE SOLID STATE RELAY The TOSHIBA TLP3520A consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 16 lead plastic DIP package.

2n243

Abstract: 2N244 transistor all
Contextual Info: TYPES 2N243, 2N244 N-P-N GROW N-JUNCTIO N SILICON TRANSISTORS B U L L E T I N NO. DL-S 6 1 2 2 3 8 , D E C E M B E R 1 9 6 1 Oval Welded Package mechanical data The transistor is in an oval w elded p ackag e with glass-to-metal hermetic seal between case an d leads.

ECRE

Contextual Info: 5 -7 Precaution of Assembly for Mini Flat Coupler 5 -7 -1 ) Soldering A vo id th e rise o f device te m p e ra tu re as m u ch as p ossible by th e fo llo w in g c o n d itio n s . a) S old e ring lead d ire c tly by so ld e r header) 26CTC M a x ., 1 0 second M ax.

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil