LD2SC Search Results

Contextual Info: N AMER PHILIPS/DISCRETE 25E D ^53=131 0D20240 T • BUK426-50A BUK426-50B PowerMOS transistor G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies

100-P

Abstract: BUK446 BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor
Contextual Info: PHI LI P S I N T E R N A T I O N A L bSE D Kl 7 1 1 0 Ô S b Ü O b M Ol b E4S H P H I N Philips Semiconductors Product Specification BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

ld2sc

Contextual Info: Philips Semiconductors Product specification TrenchWIOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

BUK436

Abstract: BUK436-200B 200B iran BUK436-200A
Contextual Info: Philips Components BUK436-200A BUK436-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Pow er Supplies SM PS , motor control, welding,

BUK445

Abstract: BUK445-60A BUK445-60B IT48
Contextual Info: PHILIPS INTER NAT IONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

BUK456

Abstract: 100-C BUK456-200A BUK456-200B T0220AB
Contextual Info: Philips Components BUK456-200A BUK456-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

V10-40 diode philips

Abstract: V10-40 diode D02G BUK445-450B C25F SL 100 power transistor
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbSBTBl 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK455-60A

Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Contextual Info: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: bbS3=l31 0030475 4 SSE D N AMER PHI LIP S/DISCRETE BUK454-600A BUK454-600B PowerMOS transistor T - 37 - 1 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK454-450B

Abstract: T0220AB
Contextual Info: N AMER PHILIPS/DIS CRET E 2SE D • ^53=131 00204b5 1 ■ PowerMOS transistor BUK454-450B r - 3 7 - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

diode h5e

Abstract: BUK552 BUK552-50A BUK552-50B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E E5E D MÊ t,b53T31 O O S O b a S 2 m PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-eftect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA V,D SS Repetitive Avalanche Rated Fast switching

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched