LD27 Search Results

LD2772

Abstract: SM02
Contextual Info: LD2772 Specifications and Applications Information 09/28/06 Two Lamp DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX J1 1 .14 [3,6] Powered by a regulated +12 Volt DC source, the LD2772 is designed to power the backlight of the Optrex T51513D104U-FW-A-AB display.

CQY99

Abstract: LD271 LD274 SFH484-2
Contextual Info: www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 MK-CBeTOAMOAbi □ 5 MM Kofl: [h m ] CQY99 LD271 LD274 SFH484-2 950 950 950 880 lF [mA] 150 130 100 100 yron oo3opa [°] ±50 ±25 ±10 ±8 Tun nnH3bi rony6afl npo3paHHaa rony6afl npo3paHHaa 6ecqBeTHaa

LD2772

Abstract: SM02 T-51513D104U-FW-A-AB
Contextual Info: Endicott Research Group, Inc. 2601 Wayne St., Endicott NY 13760 607-754-9187 Fax 607-754-9255 http://www.ergpower.com Specifications and Applications Information 07/17/02 LD2772 Two Tube DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX J1 1

HH-1M2012-601

Abstract: LDO, ld12 LD22 LD23 LD24 LD25 LD26 LD27 LD28 LD29
Contextual Info: 2 8 LD31 LD30 LD29 LD28 LD27 LD26 LD25 LD24 LD23 LD22 LD21 LD20 LD19 LD18 LD17 LD16 LD15 LD14 LD13 LD12 LD11 LD10 LD9 LD8 LD7 LD6 LD5 LD4 LD3 LD2 LD1 LD0 LD[0.31] LA[0.31] A9 A11 A12 A10 A13 C10 D10 C11 B11 B10 B12 C12 D11 D9 B13 C13 D12 A14 B14 C14 A15

Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbOS G0273b3 SIEM EN S «SIEG LD273 TWO CHIP INFRARED EMITTER -r=^f-n Package Dimensions in Inches mm Chip Location 024 (0 6) 016{0 4) 5 ft - r ~ 354(9 0» 035 {0 8) 020 (0 5 ) ^ / 1JJ g g 181(461 323 (8 2 ) T ^ -— l

LD2770

Abstract: SM02 T-51382D064J-FW-P-AA
Contextual Info: LD2770 Specifications and Applications Information 04/27/04 Two Tube DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX J1 1 .14[3,6] Powered by a regulated 12 Volt DC source, the LD2770 is designed to power the backlight of the Optrex T-51382D064J-FW-P-AA.

Siemens RS 1001 L

Abstract: SFH2030
Contextual Info: SIEMENS LD274 LD275 GaAs INFRARED EMITTER * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation in Near Infrared Range O p e r a tin g /S to ra g e T e m p e r a tu r e R a n g e T o p , Ts t g * High Efficiency

Contextual Info: LD274 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm Chip Position Surface not flat .031 (0.8 .016(0.4 _L .100(2.54) ♦ .071 (1.0) .047 (1.2) ” T I t i ~P • \Cathode~ 1.140(29) 1,061 (27) .224 (5.7) .200 (5.1) .200 (5.1 .189 (4.8 .307 (7.8)

ld18

Abstract: ld25 LA29 LA18 LD11 LD12 LD17 LD19 LD20 PU0207
Contextual Info: VCC LD[0.31] LA[2.31] LD[0.31] 1 2223390 4590190 LD0 LD1 LD2 LD3 LD4 LD5 LD6 LD7 LD8 LD9 LD10 LD11 LD12 LD13 LD14 LD15 LD16 LD17 LD18 LD19 LD20 LD21 LD22 LD23 LD24 LD25 LD26 LD27 LD28 LD29 LD30 LD31 5 4 3 2 207 206 205 204 203 202 201 200 199 198 197 196

La2 D22

Abstract: RN0401 la3 d20 ld18 PR 84 LD17 LD19 LD20 LD11 LD12
Contextual Info: +3.3V LD[0.31] LD[0.31] LA[2.31] 111111 22446688022446 01091909009090 LD0 LD1 LD2 LD3 LD4 LD5 LD6 LD7 LD8 LD9 LD10 LD11 LD12 LD13 LD14 LD15 LD16 LD17 LD18 LD19 LD20 LD21 LD22 LD23 LD24 LD25 LD26 LD27 LD28 LD29 LD30 LD31 82 79 78 77 76 75 74 73 72 71 68

LD271 APPLICATIONS

Abstract: IR LD271
Contextual Info: L 27t/H LD271L/HL SIEMENS 1" lea d s GaAs Infrared Emitter Dimensions in inches mm ,354(9.0) Surface not fla t- 10 (254) .024(0.6) 039 0 0) ' 0 ^ ° « ) :(g8(0.7f| T •0S1 ( l.s jÿ .071 (1.8)-Ci39(1.Q)y .047<1.2) Surface not flat .323 (8.2) >.307(7.8i

LD275

Abstract: LD275 led LD274 SFH2030 SFH415 high power diode axial gaas LED infrared
Contextual Info: SIEMENS LD274 LD275 GaAs INFRARED EMITTER Package Dimensions in Inches mm Surfacs not flat 0 2 4 (0 6) 0 1 6 (0 4) 2 2 4 (5 7) 2 0 0 (5 1) 031 (0 6) 0 1 6 (0 4) Í \ 0 7 1 (1 8 ) 200 (5 1) 189 (4 8) T r~ Cathode 307 (7 8) * 295 (7 5) 047(1 2) 1 140(29) t 061 (27)

IR LD271

Abstract: BP103 TP20 BP104 SFH20
Contextual Info: LD271 111LEADS LD271L SIEMENS GaAs INFRARED EMITTER Maximum Ratings FEATURES • T1% 5 mm Package • Lightly Diffused Gray Plastic Lens • • • • • LD271L, 1" Leads Long Term Stability Medium Wide Beam, 50° High Power Matches Photodiodes SFH205 or BP104

LD275 led

Contextual Info: SIEMENS LD274 LD275 GaAs INFRARED EMITTER Package Dimensions in Inches mm Surfacs not flat 0 2 4 (0 6) 0 1 6 (0 4) 2 2 4 (5 7) 2 0 0 (5 1) 031 (0 6) 0 1 6 (0 4) Í \ 0 7 1 (1 8 ) 200 (5 1) 189 (4 8) T r~ Calhode 307 (7 8) * 295 (7 5) 047(1 2) 1 140(29) t 061 (27)

BP104 siemens

Abstract: BP103B equivalent BP103B 100MS BP104 LD273 SIEMENS Phototransistors SO 273 siemens m7ep
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • 8235b05 D0273b3 ^ « S I E G S IE M E N S LD273 TWO CHIP INFRARED EMITTER Package Dimensions in Inches mm Chip Location 197 (5 0) 181 (4 6) 024 (0 6) 016 (0 4) Maximum Ratings FEATURES • Very High Radiant Intensity • TWo Chip Device

ir 4842

Contextual Info: GaAIAs Infrared Emitter 880 nm FEATURES • Made in a liquid phase epitaxy procsss • High reliability • Spectral match with silicon photodetectors • SFH 484: LD274 • SFH 485: SFH 300, SFH 203 • Package - T13/4 5m m - Violet epoxy resin - solder tabs lead spacing

LD275 led

Abstract: LD275 LD274 in3050 SFH41S marking LEM SFH2030
Contextual Info: SIEMENS LD274 LD275 GaAs INFRARED EMITTER Package Dimensions in Inches mm Chip Portion •024(0«) 01« (0.4) 03t (OB) .016(0.4) J._ 1. .232(5.9) .217(55) .18# (4.81 1 8 S (« ) i 200(5.1) » k* v y y r .071 (\£ l .o/i d.ej .047 f l -2) 047 (1.2) LD274

SM02

Contextual Info: LD2771 Specifications and Applications Information 10/11/06 Two Lamp DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX J1 1 .14 [3,6] Powered by a regulated +12 Volt DC source, the LD2771 is designed to power the backlight of the Optrex T51638D084-FW-A-AA display.

sfh484

Contextual Info: LD274 SIEMENS GaAs Infrared Emitter Dimensions in inches mm Surface not flat .024(0.6) .016(0.4) J_ .100(2.54) 1-.071 (1.8) .047(1.2)" .224 (5.7) .200 (5.1) .031(0 , .016(0.4! T .232(5.9) .217(5.5)' i .200(5.1) .189(4.8) -4 LI f Cathode .024(0.6) .016(0.4)'

BP104

Contextual Info: SIEMENS LD271 LD271L 1 " LEADS GaAs INFRARED EMITTER Package Dimensions in Inches mm Surtaca not lla l — * chip Position .169 (4.8) .10 (2.54) .024 (0.6) .018 (0.4) :165 (4.2) 0 3 9 11 0) .0 2 8 (0 .7 )^ XC-H 051 ( 1 . 3 ) j ~ .0 3 9 (1 .0 ) .071 (1.8)^

U0701

Abstract: C0702 C0704 La2 D22 D0701 U0702 c0706 D0702 C0708 C0705
Contextual Info: 1 LD[0.31] 2 3 LD[0.31] 4 5 6 7 8 LA[2.31] U0701 LD0 LD1 LD2 LD3 LD4 LD5 LD6 LD7 LD8 LD9 LD10 LD11 LD12 LD13 LD14 LD15 LD16 LD17 LD18 LD19 LD20 LD21 LD22 LD23 LD24 LD25 LD26 LD27 LD28 LD29 LD30 LD31 A B PU0701 PU0702 PU0703 PU0704 PCLK2A RESET CA PORT~

BP104 siemens

Abstract: TP20 ld271 SFH205 jas 210
Contextual Info: SIEMENS LD271 LD271L 1 " LEADS G a A s INFRARED EMITTER * High Power * Matches Photodiodes SFH205 or BP104 or Phototransistors BP103B Characteristics TA=25°C * Lightly Diffused Gray Plastic Lens * LD271L, 1 " Leads • Long Term Stability * Medium Beam, ±25°

c4460

Abstract: TMSC44 TMS320C40GFL Texas Instruments processor selection guide 1994 120M 336M LD31 TMS320C44 TMS320C44-50 TMS320C44-60
Contextual Info: TMS320C44 DIGITAL SIGNAL PROCESSOR SPRS031C − AUGUST 1994 − REVISED MARCH 2004 D Highest Performance Floating-Point Digital D D D D D D D D D Signal Processor DSP − TMS320C44-60: 33-ns Instruction Cycle Time, 330 MOPS, 60 MFLOPS, 30 MIPS, 336M Bytes/s

SFH317-2

Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
Contextual Info: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2