LC90 Search Results

Contextual Info: ENL INSTR/ POW ER ^ SbE D General 5 ^ Sem iconductor ^ Industries, Inc. • 3 0 ^ 0 13 7 0 0 0 4 ^1 5 SS4 ■ £ IC Tr a n s Z o r b ® TRANSIENT VOLTAGE SUPPRESSORS T-11-23 LOW CAPACITANCE LC6.5 THRU LC90A FEATURES APPLICATION • 1500 watts Peak Pulse Power

LC901

Contextual Info: BOLT SENSORS WITH MOUNTING WASHERS LC901 Series Load Washers TOP WASHER D DIA. LC900 Series Compression 0-2,000 lb to 0-100,000 lb 0-9,000 N to 0-450,000 N Model LC901-1⁄4-5K Shown Larger Than Actual Size SENSOR B DIA. E DIA. A DIA. W W BOTTOM WASHER C 4 FT.

Contextual Info: H b û b 2 2 b 0 0 0 1 Ö 0 3 ^21 I IX Y ID IXYS IG B T w ith D io d e ÌX S N 3 0 N 10 0 A U 1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 é * 'T i Symbol Test Conditions V«s Tj = 25°C to 150°C 1000 V v«* Tj = 25°C to 150°C; RGE= 1 M£2

Contextual Info: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK30N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C

Contextual Info: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C

28N30

Contextual Info: r i T v v < v HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ ^fi(typ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ 300 V v GES

Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400

GAL20V8

Abstract: gal20v8 application
Contextual Info: rZ Z S C S -T H O M S O N * 7 # RjflD^iIUiOT OîOD®i GAL20V 8 E2CMOS PROGRAMMABLE LOGIC DEVICE • ELECTRICALLY ERASABLE CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — Guaranteed 100% Yields ■ HIGH PERFORMANCE E*CMOS TECHNOLOGY

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C

ixgh40n30

Contextual Info: □ IXYS VCES HiPerFAST IGBT IXGH40N30/S IXGH40N30A/S IXGH40N30B/S ^C25 600 V 60 A 600 V 60 A 600 V 60 A V CE sat 1.8 V 2.1 V 2.4 V t. 220ns 120ns 75 ns Preliminary data TO-247 SMD* Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300

Contextual Info: □IXYS Preliminary data Low -u vv V v ICE sat High speed IGBT with Diode V " ces 1000 V IXGH25N100U1 IXGH25N100AU1 1000 V ^C25 50 A 50 A V v CE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES ^ v CGR Tj = 25°C to 150°C; RGE = 1 M£i

lcr80

Abstract: marking lc8 IEC61000-4-4 LC170A LCE170A MIL-PRF19500 SMCGLCE170A SMCJLCE170A ARINC 712 jantx rectifier 5A
Contextual Info: LC6.5 thru LC170A 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE DO-13 DO-202AA WWW . Microsemi .C OM DESCRIPTION This hermetically sealed Transient Voltage Suppressor (TVS) product family includes a rectifier diode element in series and opposite direction to achieve low

Contextual Info: Transient Voltage Suppressors I Part Number TVS JAN1N6063A JANTX1N6063A JANTXV1N6063A 1N6167 1N6167US JAN1N6167 JAN1N6167US JANTX1N6167 JANTX1N6167US JANTXV1N6167 J ANTXV1N6167US 1N6167A 1N6167AUS JAN1N6167A JAN1N6167AUS JANTX1N6167A JANTX1N6167AUS J ANTXV1N6167A

Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient

Contextual Info: Hi Per FAST IGBT with Diode IXGH 32N60BD1 CES CE sat Combi Pack t f1 600 60 2.2 80 V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j =25° C to 150° C 600 V VCGR T j = 25° C to 150° C; RGE= 1 M ii 600 V v GES Continuous

50N60A

Abstract: IXGH50N60AS IXGH50N60A
Contextual Info: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600

st 247

Contextual Info: DIXYS Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 1400/1600 V 33 A 7V 30 ns CES ^C25 v CE sat t N-Channel, Enhancement Mode TO-247 AD S ym b o l T est C o n d itio n s M axim um R atings

7N60C

Abstract: LI 20 AB
Contextual Info: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V

92520E

Contextual Info: DIXYS IXSN 55N120AU1 High Voltage IGBT with Diode V CES IC25 vCE sat 1200 V 110 A 4V Short Circuit SOA Capability Symbol Test Conditions VCES v CGB Tj = 25°Cto150°C Tj = 25° C to 150° C; v GES Continuous Transient v GEM IC25 'c 9 0 ' cm SSOA (RBSOA) Maximum Ratings

52N60A

Abstract: 52N60 1XSN52N60AU1
Contextual Info: IGBT with Diode IXSN 52N60AU1 VCES I = 600 V = 80 A = 3V C25 v CE sat Short Circuit SOA Capability Symbol V CES Test Conditions T, = Maximum Ratings 25°C to 150CC V 600 Tj = 25°C to 150°C; Rge = 1 Mfi 600 A v" g e s Continuous ±20 V vy g e m T ransient

dc servo igbt

Contextual Info: n i x Y S IGBT with Diode IXSN 80N60AU1 VCES I C25 vv CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary data Symbol Maximum Ratings Test Conditions v CES T j = 25° C to 150° C 600 V vt c g r T j = 25° C to 150° C; RG6 = 1 M£2 600 A V G ES

Contextual Info: Advanced Technical Information IGBT IX G H 2 0 N 1 0 0 IX G T 2 0 N 1 0 0 V CES ^C25 v CE sat ¡>c Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 1000 V V CGR T j = 25° C to 150° C; RGE = 1 MQ 1000 V v GES Continuous ±20 V VGEM Transient

IXGH32N60B

Contextual Info: HiPerFAST IGBT IXGH 32N60B IXGH 32N60BS vCES ^C25 v* CE sat = = = = 600 V 60 A 2.5 V 80 ns ÒE Maximum Ratings Symbol Test Conditions VCEs T j = 2 5 °C to 1 5 0 °C 600 V VCOR v GES T, = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V v GEM Transient