IXGH20N30 Search Results

Contextual Info: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C

Contextual Info: ÏXYS HiPerFAST IGBT IXGH20N30 VCES C25 VCE sat typ t fi(typ) Symbol Test Conditions V T j = 2 5 °C to 150°C Maximum Ratings 300 V 300 V Continuous +20 V Transient 130 V T,J = 2 5 °C to 150J C; FLO 1 M fi Tc -2 5 C 40 A ^C9G T c = 90° C 20 A ^CM T c = 25° C, 1 ms

Contextual Info: HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient

robot control

Abstract: IXGH20N30
Contextual Info: HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient

ixys ml 075

Abstract: 20N30S
Contextual Info: □ IXYS PRELIMINARY DATA SHEET Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C 20 A ^CM Tc = 25°C, 1 ms

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40