L3S33 Search Results

1L43

Abstract: wf vqc 10 d a6 MH 7420 MSM8128-8S
Contextual Info: MOSAIC SEMICONDUCTOR INC S3E ]> Inoe L3S337T 0GG123D 234 128K x 8 SHAM molate MSM8128-85/10/12 Issue 3.0 : October 1992 Semiconductor f Pin Definition NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 02 GNO 131,072 x 8 CMOS High Speed Static RAM Features Fast Access Times of 85/100/120 ns

Contextual Info: MOSAIC SEMICONDUCTOR INC 40E » m ^33337^ □ □ G 0 3 2 ci ? ^ M O C 7 ^ -2 3 -/y 512K x 8 SRAM Module Issue 1.0 : April 1991 Mosaic MS8512RKX/A-55/70/85 Semiconductor ADVANCE PRODUCT INFORMATION Inc. 524,288 x 8 CMOS High Speed Static RAM Pin Definition

LM 7420

Contextual Info: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are

67S4000A

Abstract: 3D-30 A45 so
Contextual Info: mosaic 128KX 3 2 SRAM Module PUMA67S4000/A-45/55/70 semiconductor, inc. Issue 4.0: March 1996 4,194,304 bit CMOS High Speed Static RAM Description The PUMA67S4000/A is a 4Mbit CMOS High Speed Static RAM organised as 128kx 32 in a JEDECJ-leaded Ceramic Surface Mount

Contextual Info: M O S E L V IT E L IC V53C8257H U LTR A -HIG H SPEED, 256KX 8B IT P A G E M O D E WITH E X TE N D E D DATA O U T P U T ED O A N D C A S B U R S T M O D E CM O S D YN A M IC R A M PR E LIM IN A R Y 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, Orac)

Contextual Info: M O S EL V IT E L IC V53C8129H ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Icu ò 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode With EDO Cycle Time, (tpC)

Contextual Info: MOSEL VITELIC P R E LIM IN A R Y V53C16256H 2 5 6 K X 16 F A S T P A G E M O D E CM O S D YN A M IC R A M HIGH PERFORMANCE 40 45 50 60 40 ns 45 ns 50 ns 60 ns 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, tPC 23 ns 25 ns 28 ns 35 ns Min. Read/Write Cycle Time, (tRC)

v110h

Abstract: V53C104F
Contextual Info: M O S E L VTTELÊ C V53C 104F H IG H PE R FO RM A N CE, L O W P O W E R 2 5 6 K X 4 B IT F A S T P A G E M O D E CM O S D Y N A M IC R A M 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns

P 600 I 1903

Abstract: moc 4-pin
Contextual Info: MOSAIC SEMICONDUCTOR INC hHE D • b a S B a ? 1! 000E057 SOS ■ M O C 128KX 32 EEPROM MODULE molate PUMA 67E4000X-15/20/25 Issue 1.2: Septembed 993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc " 4,194,304 bit MNOS High Speed EEPROM Features •

mrah

Contextual Info: M O SE L VÊTEUC V53C104N H IG H PERFO RM ANCE, 3.3 VO LT 2 5 6 K X 4 B IT F A S T P A G E M O D E C MOS D YN A M IC R A M HIGH PERFORMANCE V53C104N 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA)

Contextual Info: MOSEL — VITELIC 4flE D MOSEL b3S33Tl Q O Q O i m MOVI 5 MS72215/16 & MS72225/26 ADVANCE INFORMATION 512 x 18 & 1024 x 18 Parallel Synchronous FIFOs FEATURES DESCRIPTION • Full C M O S clocked synchronous FIFO s The MS72215/16 and MS72225/26 are clocked registered FIFOs

V53C104D

Contextual Info: M O S E L V IT E U C V53C104D HIGH PERFORMANCE, LO W POWER 256K X 4 B IT FAS T PAG E MODE CMOS DYNAMIC RAM PRELIMINARY 60 HIGH PERFORMANCE V53C104D 70 80 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, 0CAA) 30 ns 35 ns 40 ns

Contextual Info: M O S E L V IT E L IC PRELIMINARY V53C16256H 2 5 6 K x 16 FAST PAGE MODE CMOS DYNAMIC RAM 40 45 50 60 Max. RAS Access Time, Orac 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, ^ M ) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (V>c)

Contextual Info: M O S E L V tT E L IC MS6264H 8K x 8 HIGH SPEED CMOS STATIC RAM Preliminary Features Description • High-speed - 15/20 ns ■ Low Power dissipation: — 825mW Max. Operating — 550(xW (Max.) Power Down ■ 5 V + 10% supply ■ Fully static operation ■ TTL compatible I/O

Contextual Info: M O SEL VETEUC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4256 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (1M )

Contextual Info: 128Kx 32 FLASH Module molaic PUMA 2F4001 -12/15/20 Issue 1.1 rNovember 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r 4,194,304 bit CMOS FLASH Memory Pin Definition Features 1 o 08 o 09 o 010 o A14 o A16 o A11 o Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.

Contextual Info: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.

Contextual Info: PUMA 3FI6006-90/12/15 mosaic semiconductor, inc. 512K X 32 FLASH MODULE Issue 4.0 August 1995 Description The PUMA. 3F16006 is a 16 Megabit CMOS 5.0V only FLASH Module in a 6 6 pin PGA package, lAfoich is configurable as 8 , 16, 32 bit wide using CE1-4. Access times of 90, 120 and 150 ns are

Q001

Abstract: DHR48 V53C464
Contextual Info: bSE M O SEL-VITELIC T> m b 3 S 3 3 T l Ü G Q lflM b b T l V53C464A FAMILY HIGH PERFORMANCE; LOW POWER 64K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)

Contextual Info: MOSEL-VITELIC fc.2E D MOSEL-VITELIC • V404J8 and V404J9 1MX9, 1 M X 8 B IT FA ST PAGE MODE CMOS DYNAMIC RAM M EM ORY MODULE HIGH PERFORMANCE V404J8/9 tp^ç 60/60L 70/70L 7 0 ns 8 0 ns 100 35 ns 4 0 ns 50 ns Min. Fast Page M ode Cycle Tim e, (tp c ) 4 5 ns

2F400

Abstract: by126 2F4001MB-20
Contextual Info: molaic 128Kx 32 FLASH Module PUMA 2F4001-12/15/20 /X0255 Issue 1.1: March 1994 M o s a ic S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION Inc. 4,194,304 bit CMOS FLASH Memory Pin Definition Features Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.

Contextual Info: M O S E L V IT E L IC V53C100H ULTRA-HIGH PERFORMANCE LOW POWER 1M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C100H 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 22 ns

Contextual Info: MOSEL VtTEU C PRELIMINARY V400J32/36 4M x 32 & 4M X 36 CMOS MEMORY MODULES Features Description • The V 400J32 M em ory M odule is organized as 4,194,304 x 32 bits and the V400J36 is orgranized as 4,194,304 x 36 bits in a 72-lead single-in-line m odule. T he 4M x 32 m em ory m odule uses 32 4M x

Contextual Info: M OSEL VITELIC V43644R04V C TG-10PC 3.3 VOLT 4M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 4,194,304 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 4M x 16 SDRAM in TSOPII-54 Packages