L14G2 Search Results

OF LED 55B

Abstract: Phototransistor L14G3 application L14G1 l14g1 equivalent L14G2 L14G3 L14G3 phototransistor Phototransistor L14G3 L14G2 application note L14G3 equivalent
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3

L14g1

Contextual Info: 3875081 G E SO LID STATE 0 1E 19662 D G0S71EM H • HAS Optoelectronic Specifications_ 37E HARRI S SEMICOND SECTOR Light Detector 4305271 D Planar Silicon Photo Transistor L14G1,L14G2,L14G3 T he G E Solid State L I4 G I th ru LI4G 3 are highly sensitive N P N Planar Silicon P hototransistors.

L14GI

Abstract: l14g1 equivalent L14G3 L14G3 equivalent L14G2 l14g2 equivalent
Contextual Info: Detector Specifications L14G1, L14G2, L14G3 Light Detector Planar Silicon Phototransistor absolute m axim um ratings: P LAN E T h e L14GI th ro u g h L14G3 are highly sensitive NPN P lan ar Silicon P hototransistors. T hey are h o u se d in a T O -1 8 style herm etically sealed

2R70

Abstract: L14G3 L14G1 L14G1 phototransistor L14G2 L14G3 phototransistor ic iR light control L14G-1
Contextual Info: Detector Specifications L14G1, L14G2, L14G3 Light Detector Planar Silicon Phototransistor T h e L14G1 th ro u g h L14G3 are high!}' sensitive NPN P la n a r Silicon P h ototransistors. T h ey are h o u se d in a T O -18 style herm etically sealed package with lens cap. T h e L 14G series is ideal fo r use in optoelectronic

drive circuit for L14G3

Abstract: l14g2 L14G1 l14g3 telefunken ta 400 L14G3 phototransistor L14G1 phototransistor
Contextual Info: TELEFUNKEN ELECTRONIC &R2DCni QOOaSRb S 2 5 2 P L14G1 S 2 5 3 P L14G2 S 2 5 4 P L14G3 17E D TTlILillFMJKtiKl electronic C/Mtivf'fechnotoO«« T - f h c[ Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
Contextual Info: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

L14F1 PHOTOTRANSISTOR

Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW

Contextual Info: [ * 9 GaAs INFRARED EMITTING DIODE ipmutïiftiits 1N6266 The 1N6266 is a 940nm LED in a narrow angle, T M6 package. SEATIN G • Good optical io mechanical alignment SYMBOL A •8>b D Ü0D. a e, h .1 . k i. u JNCHES Ml» MAX. -255 .016 ,203 tao .021

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Phototransistor L14F1

Abstract: Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor L14G2 Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18
Contextual Info: Hermetic Silicon Photosensors TO-18 Detector Package Convex Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 0.50 (12.7) MIN 0.020 (0.51) 3X Base 0.100 (2.54) 0.050 (1.27) Emitter Part VCE Number (V) Test Conditions Ee ␭p (mW/cm2) (nm) IC (ON)

st 1086

Abstract: L14G1 phototransistor L14G1 ST-1605 ST1087
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister m ounted in a narrow angle, TO -18 package. FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. A .225 .255 5.71 6.47

L14Gl

Abstract: L14F
Contextual Info: OPTOELECTRONICS HERMETIC SILICON INFRARED PHOTOSENSORS Metal Can Convex Lens R e c e p tio n A n g le @ 1/2 P o w e r b v c e o • C E O /V c e n A /(V ) m ax m in m ax u n its (V ) m in ±10° 6.00 - mA 45 100/10 BPW37 ±10° 3.00 - mA 45 100/10 1 L14G1

OSI photo detector

Abstract: 1N6266
Contextual Info: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940

2N5777

Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

PHOTO DIODE LED55C

Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

ST1083

Abstract: L14G3 phototransistor L14G1 phototransistor st1086 ST108 st1084 Phototransistor L14G3 st1082 L14G1 L14G2
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR BFIOELEClHftlf SCS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister mounted in a narrow angle, TO-18 package. FEATURES SYMBOL A fa e ei h J k L oc INCHES MIN. MAX. .225 ,255 .016 .021 .209

LM 8105

Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
Contextual Info: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

TIL145

Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
Contextual Info: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t

Contextual Info: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode T h e 1N6266 is a galH um -arsenide, in fra re d em itting d iode w hich em its n o n -c o h e re n t, in fra re d energy with a p eak w avelength o f 940 n an o m eters. T h is device is ch aracterized to precisely d efin e th e

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

ST1009

Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940