KTA10 Search Results

a1023

Abstract: A1023 Y transistor A1023 transistor A1023 y A1023 K Y A-1023 KTA1023 KEC a1023 transistor ktA1023
Contextual Info: SEMICONDUCTOR KTA1023 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name A1023 KTA1023 2 Lot No. 816 98.06.23 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 KEC K KEC CORP. 4 hFE Grade

A1045

Abstract: transistor A1045 hFE kec marking K IPAK KTA1045L KEC Lot No. Year y-016
Contextual Info: SEMICONDUCTOR KTA1045L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1045 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1045 KTA1045L 3 hFE Grade Y Y,GR 4 Lot No. 016 00.12.27 Revision No :

a1042

Abstract: KA1042 K A1042 KTA1042L hFE kec KA1042y A1042 y
Contextual Info: SEMICONDUCTOR KTA1042L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1042 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1042 KTA1042L 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :

transistor ktA1046

Abstract: KTA1046 KTC2026
Contextual Info: SEMICONDUCTOR KTA1046 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. A P S Low Collector Saturation Voltage B E G : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. K Complementary to KTC2026. L L R J M ) CHARACTERISTIC

SEMICONDUCTOR a1040

Abstract: A1040 A1040-Y K-EC 02 k a1040 hFE kec marking K KTA1040L
Contextual Info: SEMICONDUCTOR KTA1040L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1040 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1040 KTA1040L 3 hFE Grade Y Y,GR 4 Lot No. 016 00.12.27 Revision No :

A1045

Abstract: KTA1045D
Contextual Info: SEMICONDUCTOR KTA1045D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1045 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1045 KTA1045D 3 hFE Grade Y Y,GR 4 Lot No. 016 00.12.27 Revision No :

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1049 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VcE sat -_2.0V(Max.). • Complementary to KTC2028. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1070 e p it a x ia l p l a n a r p n p t r a n s i s t o r HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATION. FEATURES • • • • High Voltage : VCeo=-200V. High Transition Frequency : fT=150MHz Typ. . Low Collector Output Capacitance : C0b=2.6pF(Typ.).

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L KTC1027 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Complementary to KTA1023 z High Voltage Applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTA1038

Abstract: KTC2018
Contextual Info: SEMICONDUCTOR KTA1038 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌHigh Breakdown Voltage : VCEO=-100V. F ᴌLow Collector-Emitter Saturation Voltage. P Q D B : VCE sat =-2.0V(Max.) ᴌComplementary to KTC2018.

al205

Abstract: KTA1036 KTC2016
Contextual Info: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING

ktA1024

Abstract: TO-92L KTC3206 transistor 7800 ktc32 KTC3206 transistor to92l kta102
Contextual Info: KTA1024 TO-92L Transistor PNP TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 3. BASE Features — — — — 1 2 7.800 8.200 3 0.600 0.800 High Voltage : VCEO=-150V. Low Output Capacitance : Cob=5.0pF(Max.). High Transition frequency : fT=120MHz (Typ.). Complementary to KTC3206.

Contextual Info: SEMICONDUCTOR KTA1073T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE CONTROL APPLICATIONS. PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. E B K DIM A B FEATURES High Voltage : VCBO=-300V, VCEO=-300V

Contextual Info: SEMICONDUCTOR KTA1070 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATION. B D FEATURES A ᴌHigh Voltage : VCEO=-200V. ᴌHigh Transition Frequency : fT=150MHz Typ. . P DEPTH:0.2 C Q G ᴌLow Collector Output Capacitance : Cob=2.6pF(Typ.).

Contextual Info: SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES 2003. 3. 27 Revision No : 5 1/2

Contextual Info: SEMICONDUCTOR KTC2025D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J D FEATURES O K Q Complementary to KTA1045D/L E Low saturation voltage and good linearity of hFE. M B High breakdown voltage VCEO 120V, high current 1A.

Contextual Info: SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. A I C J D FEATURES ᴌLow Collector Saturation Voltage B : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. M O K ᴌComplementary to KTC2020D/L.

KTA1021

Abstract: KTC1020
Contextual Info: SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES A ᴌExcellecnt hFE Linearity O F : hFE 2 =25Min. : VCE=6V, IC=400mA. ᴌ1 Watt Amplifier Application. H M G ᴌComplementary to KTA1021.

ktc1027

Abstract: transistor ktc1027 ktc1027 transistor KTA1023 uPI Semiconductor
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC1027 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTA1023. MAXIMUM RATINGS Ta=25 °C CHARACTERISTIC RATING UNIT SYMBOL Collector-Base Voltage V CBO

kta10

Contextual Info: SEMICONDUCTOR KTA1045D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J D FEATURES ᴌHigh breakdown voltage VCEO 120V, high current 1A. O K E Q ᴌComplementary to KTC2025D/L M B ᴌLow saturation voltage and good linearity of hFE.

KTA1036

Abstract: KTC2016
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

KTA1038

Abstract: KTC2018
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1038 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S p FEATURES H DIM B C D E F SYMBOL RATING UNIT Collector-Base Voltage V CBO -100 V Collector-Emitter Voltage V CEO -100 V Em itter-Base Voltage " P O’

Contextual Info: SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES ・Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. ・Straight Lead (IPAK, "L" Suffix)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1023 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (Ta =25℃ unless otherwise noted) B Symbol V CBO B