A1040 Search Results

SEMICONDUCTOR a1040

Abstract: A1040 A1040-Y K-EC 02 k a1040 hFE kec marking K KTA1040L
Contextual Info: SEMICONDUCTOR A1040L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1040 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1040 A1040L 3 hFE Grade Y Y,GR 4 Lot No. 016 00.12.27 Revision No :

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2

SEMICONDUCTOR a1040

Abstract: A1040-Y A-1040 A1040 a1040 Y marking K A1040 diode KTA1040D dpak Package hFE kec
Contextual Info: SEMICONDUCTOR A1040D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1040 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1040 A1040D 3 hFE Grade Y Y,GR 4 Lot No. 016 00.12.27 Revision No :

LFO-14-ip

Contextual Info: 1.29 ÷ 1.33 Om CW output power > 1.0 mW LFO-14-ip Description: LFO-14-ip – is a series of optical modules based on Mitsubishi 1310nm MQW InGaAsP/InP Fabry-Perot laser diode and coupled with singlemode optical fiber. Hermetically sealed modules are performed in standard coaxial package with built-in InGaAs monitor photodiode and collimating ball lens.

ELA-810-22x60

Contextual Info: Infrared LED - Array ELA-810-22x60 2 6 ELA-810-22x60 12 6* Color Type Technology Case Infrared 2θ θ 1/2 20 deg 2θ θ 1/2 120 (deg)* GaAlAs / GaAlAs plastic lenses, metal case Description Outlines 22,5 22,5 LEDs + 22 - 0,3 Ø 13 + 3 + Applications 3 High-power IRED module includes four arrays,

ML1412R

Abstract: RLT6830G
Contextual Info: ML1412R ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT6830G TECHNICAL DATA High Power Visible Wavelength Laserdiode Structure: AlGaInP, index guided, single transverse mode

S6510MG

Abstract: s6510
Contextual Info: SRLD-650-10 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at S6510MG TECHNICAL DATA Visible Wavelength Laserdiode Structure:InGaAlP, index guided single transverse mode

RLT6550G

Abstract: Photodiode
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT6550G TECHNICAL DATA High Power Visible Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 650 nm typ.

Contextual Info: 1.29 ÷ 1.33 !m CW output power > 2.0 mW LFO-14/2-ip Description: LFO-14/2-ip – is a series of optical modules based on Mitsubishi 1310nm MQW InGaAsP/InP Fabry-Perot laser diode and coupled with singlemode optical fiber. Hermetically sealed modules are performed in standard coaxial package with built-in InGaAs monitor photodiode and collimating

Laser-Diode 808

Abstract: laserdiode Laser-Diode RLT808150GO
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808150GO TECHNICAL DATA High Power Infrared Laserdiode Emitting Dimensions: 100 x 1 µm Lasing wavelength: 808 nm typ.

RLT9850MG

Abstract: Laser-Diode
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT9850MG TECHNICAL DATA High Power Infrared Laserdiode Structure: index guided, single transverse mode

RLT7850MG

Abstract: Laser-Diode
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT7850MG TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs, index guided, single transverse mode

RLT6850G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT6850G TECHNICAL DATA High Power Visible Wavelength Laserdiode Structure: AlGaInP, index guided, single transverse mode

RLT808100GM

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808100GM TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, aperture 15 x 1.5 µm

RLT9820G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT9820G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: GaAlAs double heterostructure Lasing wavelength: 980 nm typ.

RLT68250G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT68250G TECHNICAL DATA High Power Visible Wavelength Laserdiode NOTE! Structure: AlGaInP/GaAs, Aperture: 1 x 50 µm

laserdiode 820 nm

Abstract: RLT810-150W mcb DATASHEET laserdiode rangefinding laserdiode application Laser-Diode Laser-Diode 808
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT810-150W TECHNICAL DATA High Power Pulsed Infrared Laserdiode The RLT810-150W is a pulsed laserdiode array, ideal for illumination,

S6520MG

Contextual Info: 990704 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at S6520MG TECHNICAL DATA High Power Visible Wavelength Laserdiode Structure:InGaAlP, index guided single transverse mode

ELD-870F-525

Contextual Info: LED lamp ELD-870f-525 Radiation Type Technology Case infrared ELD-870f-525 AlGaAs/AlGaAs 5 mm plastic lens Description Applications High-power, high-speed, double heterostructure with removed substrate, with stand off lead Optical communications, safety equipment

RLT980-10W

Abstract: laserdiode Laser-Diode
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT980-10W TECHNICAL DATA High Power Pulsed Infrared Laserdiode The RLT980-10Wis a pulsed laserdiode, ideal for illumination, rangefinding and medical systems.

850 nm LED

Abstract: HIR333
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at HIR333 TECHNICAL DATA INFRARED GaAlAs LED Technology: GaAlAs structure Peak Wavelength: 850 nm typ. Radiant Intensity: 10 mW/sr typ.

OPE5594S

Abstract: ope5594
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at OPE5594S TECHNICAL DATA HIGH POWER IR-LED Technology: GaAlAs Peak Wavelength: 940 nm typ. Radiant Intensity: 120 mW/sr

RLT98100MG

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT98100MG TECHNICAL DATA High Power Infrared Laserdiode Structure: index guided single transverse mode

RLT6605G

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@iddc.via.at http://www.iddc.via.at/kunden/laser/home.htm RLT6605G TECHNICAL DATA Visible Wavelength Laserdiode Structure: AlGaInP, index guided