KTA102 Search Results

a1023

Abstract: A1023 Y transistor A1023 transistor A1023 y A1023 K Y A-1023 KTA1023 KEC a1023 transistor ktA1023
Contextual Info: SEMICONDUCTOR KTA1023 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name A1023 KTA1023 2 Lot No. 816 98.06.23 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 KEC K KEC CORP. 4 hFE Grade

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L KTC1027 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Complementary to KTA1023 z High Voltage Applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ktA1024

Abstract: TO-92L KTC3206 transistor 7800 ktc32 KTC3206 transistor to92l kta102
Contextual Info: KTA1024 TO-92L Transistor PNP TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 3. BASE Features — — — — 1 2 7.800 8.200 3 0.600 0.800 High Voltage : VCEO=-150V. Low Output Capacitance : Cob=5.0pF(Max.). High Transition frequency : fT=120MHz (Typ.). Complementary to KTC3206.

Contextual Info: SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE A ᴌComplementary to KTA1023. P DEPTH:0.2 G C MAXIMUM RATING Ta=25ᴱ RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO

KTA1021

Abstract: KTC1020
Contextual Info: SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES A ᴌExcellecnt hFE Linearity O F : hFE 2 =25Min. : VCE=6V, IC=400mA. ᴌ1 Watt Amplifier Application. H M G ᴌComplementary to KTA1021.

ktc1027

Abstract: transistor ktc1027 ktc1027 transistor KTA1023 uPI Semiconductor
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC1027 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTA1023. MAXIMUM RATINGS Ta=25 °C CHARACTERISTIC RATING UNIT SYMBOL Collector-Base Voltage V CBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1023 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (Ta =25℃ unless otherwise noted) B Symbol V CBO B

Contextual Info: WEITRON KTA1023 PNP Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol value Units Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO

KTA1024

Abstract: KTC3206 kta1024 pnp
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1024 TO-92L TRANSISTOR PNP FEATURES z High Voltage : VCEO=-150V. z Low Output Capacitance : Cob=5.0pF(Max.). z High Transition frequency : fT=120MHz (Typ.). z Complementary to KTC3206.

KTA1024

Abstract: KTC3206
Contextual Info: SEMICONDUCTOR KTA1024 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURES D ᴌHigh Voltage : VCEO=-150V. A ᴌLow Output Capacitance : Cob=5.0pF Max. . ᴌHigh Transition Frequency : fT=120MHz (Typ.). P DEPTH:0.2 ᴌComplementary to KTC3206.

KTC1027

Abstract: ktc1027 transistor ra-100 KTA1023 transistor ktc1027
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC1027 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTA1023. MAXIMUM RATINGS Ta=25 °C CHARACTERISTIC RATING UNIT SYMBOL Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage

KTA1023

Abstract: transistor ktA1023 ktc1027 ktc1027 transistor transistor ktc1027
Contextual Info: SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A Complementary to KTC1027. P DEPTH:0.2 G C MAXIMUM RATING Ta=25 RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120

ktc1027 transistor

Abstract: transistor kta1023 KTA1023 KTC1027 kta1023* transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1023 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (T A =25℃ unless otherwise noted) B Symbol V CBO B

Contextual Info: SEMICONDUCTOR KTA1021 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES A ᴌExcellent hFE Linearity. O F : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA ᴌ1 Watt Amplifier Application. H M G ᴌComplementary to KTC1020.

KTC1020

Abstract: KTA1021
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1021 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity. : hFE 2 =25(Min.) at V ce=-6V, Ic=-400mA • 1 Watt Amplifier Application.

ktc1027

Abstract: KTA1023
Contextual Info: SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A ᴌComplementary to KTC1027. P DEPTH:0.2 C Q RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage

ktc1027 transistor

Abstract: transistor ktc1027 KTA1023 KTC1027
Contextual Info: SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A ᴌComplementary to KTA1023. P DEPTH:0.2 C Q RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage

Contextual Info: SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES A ᴌExcellecnt hFE Linearity O F : hFE 2 =25Min. : VCE=6V, IC=400mA. ᴌ1 Watt Amplifier Application. H M G ᴌComplementary to KTA1021.

laser

Abstract: A1021 KTA1021
Contextual Info: SEMICONDUCTOR KTA1021 MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking A1021 116 No. Item Marking 1 Device Name A1021 2 hFE Grade 3 Lot No. 01.09.27 Revision No : Description KTA1021 - 116 01 1 Year 0 ~ 9 : 2000~2009 16 Week

a1024

Abstract: a1024 transistor a1024y transistor a1024 KTA1024
Contextual Info: SEMICONDUCTOR KTA1024 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking No. 2005. 6. 9 816 K 1 2 3 Y A1024 2. Marking 4 Item Marking Description KEC K KEC CORPORATION Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week Device Name

ktc1027

Abstract: KTA1023 transistor ktA1023
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTA1023 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTC1027. MAXIMUM RATINGS Ta=25 °C SYMBOL RATING UNIT Collector-Base Voltage V CBO -120 V Collector-Emitter Voltage

transistor ktA1023

Abstract: ktc1027 transistor ktc1027 KTA1023 ktc1027 transistor
Contextual Info: KTA1023 TO-92L Transistor PNP TO-92L 1. EMITTER 4.700 5.100 2. COLLECTER 7.800 8.200 3. BASE Features — 1 2 3 0.600 0.800 0.350 0.550 Complementary to KTC1027 13.800 14.200 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) B Symbol V CBO B V CEO B V EBO

Contextual Info: SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A Complementary to KTC1027. P DEPTH:0.2 G C MAXIMUM RATING Ta=25 RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120

KTA1024

Abstract: KTC3206 KTC3206 transistor
Contextual Info: SEMICONDUCTOR KTA1024 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURES D High Voltage : VCEO=-150V. A Low Output Capacitance : Cob=5.0pF Max. . High Transition Frequency : fT=120MHz (Typ.). P DEPTH:0.2 Complementary to KTC3206.