KSK117 Search Results
KSK117 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KSK117 | Fairchild Semiconductor | TRANS JFET N-CH 14MA 3TO-92 | Original | 84.08KB | 6 | ||
| KSK117 | Fairchild Semiconductor | Silicon N-channel Junction Fet | Original | 74.24KB | 6 | ||
| KSK117 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 101.99KB | 1 | ||
| KSK117 | Samsung Electronics | N-CHANNEL JUNCTION FET (LOW FREQUENCY LOW NOISE AMP.) | Scan | 125.01KB | 4 |
KSK117 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KSK117 SILICON N-CHANNEL JUNCTION FET LOW REQUENCY LOW NOISE AMP TO-92 HighYfs: 15ms TYP High Input Impedance: IGSS= -1nA Low Noise, NF =1dB (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDS IG PC TJ T STG Gate-Drain Voltage Gate-Current |
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ksk117 | |
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Contextual Info: KSK117 SILICON N-CHANNEL JUNCTION FET LOW REQUENCY LOW NOISE AMP T O -92 High | Yfs | : 15ms TYP High Input Impedance: I g s s = -1 nA Low Noise, N F = 1 d B (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol G ate-D rain Voltage G ate-C urrent |
OCR Scan |
ksk117 | |
KSK117
Abstract: VG 10 SAMSUNG J 350 FET
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OCR Scan |
ksk117q0q7q00t-29-2510ofia+3 | |
KSK117Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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ksk117 | |
KSK117Contextual Info: KSK117 SILICON N-CHANNEL JUNCTION FET LOW REQUENCY LOW NOISE AMP High I Yfs I :15mS TYP High Input Impedance : loss8 -1nA Low Noise, NF »1dB (TYP) ABSOLUTE MAXIMUM RATINGS (T a -2 5 1 C ) Sym bol C haracteristic Gate-Drain Voltage Gate-Current Collector Dissipation |
OCR Scan |
ksk117-100m | |
KSK117Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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ksk117 | |
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Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted |
Original |
ksk117 | |
KSK117Contextual Info: KSK117 SILICON N-CHANNEL JUNCTION FÉt LOW FREQUENCY LOW NOISE AMP. TO-92 High IYfs|: 15mS TYP High Input Impedance : ia„ = -1 n A Low Noise, NF = 1dB (TYP) ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Rating Unit -5 0 10 300 125 - 5 5 ~ 1 25 V mA |
OCR Scan |
ksk117q024fib2 | |
2N5459
Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
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ot-223jftj105ksk211ksk595+16 | |
BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
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OCR Scan |
ot-23ksc2223ksc2715ksc1623+11 | |
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Contextual Info: FUNCTION GUIDE TRANSISTORS 1.7 JUNCTION FETS 1.7.1 SOT-23 Type J-FET. DEVICE KSK211 1.7.2 V <mA) (mW) 18 10 200 MIN M AX 10 10 MIN Idss (mA) Id foA) V gs(Off) (V) TYP V ds (V) V ds (V) 9 10 10 TYP V ds (V) V ds (V) Id foA) (V) (mA) (mW) 18 10 200 KSK596 |
OCR Scan |
ot-23ksk211o-92sksk161+4 | |
transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
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OCR Scan |
ot-23kst06kst05ksc1623+16 | |
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Contextual Info: SAMSUNG ELECTRONICS INC TTbMlMS QG11S3Q 120 I SÏ16K bOE D FUNCTION GUIDE TRANSISTORS 1.7 JUNCTION FETS 1.7.1 SOT-23 Type J-FET. DEVICE KSK211 1.7.2 V (mA) (mW) MIN M AX Vos (V) 18 10 200 1 10 10 Po loss (mA) (V) (mA) (mW) KSK161 18 10 200 KSK596 20 10 100 |
OCR Scan |
qg11s3qot-23o-92sksk161+6 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5ke100a5ke100ca5ke10a5ke10ca+16 | |
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Contextual Info: TRANSISTORS FUNCTION GUIDE 1.7 JUNCTION FETS 1.7.1. SOT-23 Type J-FET. ossfmA KSK211 gm mS V gdo Iq Pd (V) <mA) (mW) MIN MAX (V) 18 10 200 1 10 10 DEVICE Vos MIN C ondition V G5(OFF)(V) TYP V ds (V) V qs (V) Id (M) MIN MAX 9 10 10 1 0.4 4 V ds Id (M) MIN |
OCR Scan |
ot-23ksk211o-92sksk161+3 | |
D880 voltage regulator
Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
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OCR Scan |
ot-23kst06kst05bcw71+16 | |
SS9013 SOT-23
Abstract: KSC1330 transistor J1x SS9014 sot-23 KSC2880 M74040 KSC2884 Marking BA SOT89 KSP44 kst2222
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OCR Scan |
ot-23kst812m4kst812m5kst812m6+16 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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Original |
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
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ot-623fot-323ot-23ot-89+14 | |
KSD 303
Abstract: ksd 180 ksd 168 bd681 9 435 tip bc548 TIP BD140 BC548 ksd 201 ksc5386 KSP20
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OCR Scan |
ksa473ksa539ksa542ksa614+16 | |
KSD 166
Abstract: KSD 168 kst 232 KSC1845 KST1623 ksc2328 KSR1001 KSD201 ksp94 TIP41 342
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OCR Scan |
ksa473ksa539ksa542ksa614+16 | |
ksd 250v 10a
Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
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OCR Scan |
ot-23ksc1623812/kscsa812/ksc+14 | |
2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
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OCR Scan |
2n44012n54012n55512sa1004+16 | |