KMM591000 Search Results

KM41C1000

Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
Contextual Info: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

KMM591000BN-6

Abstract: kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KM44C1000BJ KMM591000BN KMM591000B
Contextual Info: KMM591000BN DRAM MODULES 1MX9 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAc I rc KMM591000BN-6 60ns 15ns 110ns KMM591000BN-7 70ns 20 ns 130ns KMM591000BN-8 80ns 20 ns 150ns The KMM591000BN is a Single In-line Memory Module

Contextual Info: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

KM41C1000AJ-1M

Abstract: km41c1000aj KMM591000N
Contextual Info: KMM591000N DRAM MODULES 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM591000N is a 1M bit x 9 D ynam ic RAM high de nsity m em ory m odule. The Sam sung K M M 5 9 1 0 0 0 N c o n s is t o f tw o 4M b it D R A M s

KMM591000A

Abstract: KMM491000A-10 KMM491000A-8 30-pin simm memory
Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D 7^4145 KMM491000A/KMM591000A 0Q0ÔS31 4 I MEMORY MODULES 1 M x 9 DRAM SIP and S IM M Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate 0 , Q and CAS for Parity

TCA 290

Abstract: 41C1000 km44c1000aj 591000AN
Contextual Info: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

41C1000

Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
Contextual Info: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and

KM41C1000AJ

Abstract: KM41C1000 KMM591000
Contextual Info: MEMORY MODULES KMM491000A/KMM591000A 1 M x 9 DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate D, Q and CAS or Parity applications. • Performance range: The Samsung KMM491000A and KMM591000A are

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung

Contextual Info: SAM SUNG E L E C T R O N I C S INC b7E D O D I S Ö E T StB KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM591000C is a 1M b i t x 9 Dynamic RAM high density memory module The S a m s u n g

Contextual Info: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung

Contextual Info: j SAMSUNG ELECTRONICS INC 42E D • TTbMlME 00104SG 4 KMM591000N DRAM MODULES 1 M x 9 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION ’" ' The Samsung KMM591000N is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591000N consist of. two 4M b it DRAMs

KM41C1000

Abstract: KMM591000
Contextual Info: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

30 pin simm

Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

KM44C1000

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14

KM6264BL-10

Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent

DYNAMIC RAM CROSS REFERENCE

Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Contextual Info: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

SIMM 1Mx9 30pin

Abstract: simm EDO 72pin KMM51442100ATG KMM532
Contextual Info: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100