10OOB Search Results

KMM591000B7

Abstract: KMM591000B-7 KMM591000B6 KMM591000B
Contextual Info: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs

7443003

Contextual Info: CD-R O PERATIN G PLAY TEM P. —25~+70°C O PERATIN G (REC O RD ) TEM P. -5~+55°C '. . IF É ^ r u p ié ' 1 f è ìl~ 2 4 f t Ä Ì T ' X - A - 7 ' f K U > v I B i l ì S J t f t j f c "Super wide range" design assure of writing at all speed (1x to 24x)

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

4HSC

Contextual Info: 1. Mechanical Dimensions: ~ 0.730 M ax 3. Electrical Specifications: @25°C ISOLATION: - c G.245 TU R N S 1500 Vrm s RATIO: INSERTION LOSS: -1 .0 d B 0 .0 0 4 ^ RETURN LOSS: - 1 B d B E -1 2 d B 0.050 000000000000“ in X • a XFGIA1QOPOL Qa CD -J L -0 .0 3 0

Xfmr

Contextual Info: 1. Mechanical Dimensions: 3. Electrical Specifications: @25°C ISOLATION: 1500 Vrms 0.730 Max TURNS RATIO: P R I/ S E C 1CT:1CT ±2% D .2 4 Û OCL: 350uH Min 0>100KHz lOOmV BrnADC c Pri DCR: TBD Ohms Max 4 1 1 1» ft 0.Û45 0.025 E 0.050 Sec DCR: TBD Ohms Max

Contextual Info: PRELIMINARY AMDZ1 Am79761 Physical Layer 10-Bit Transceiver for Gigabit Ethernet GigaPHY -SD DISTINCTIVE CHARACTERISTICS • Gigabit Ethernet Transceiver operates at 1.25 Gigabits per second (Gbps) ■ Suitable for both Coaxial and Optical Link applications

RJ45 jack dimension

Abstract: jack j4 Shielded RJ45 Jack SI-50096-F
Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY” TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. / I COMPONENTSfor a CONNECTED PLA N ET^/ DOCUMENT / PART NO.: SI-50096-F TITLE : CMC, 1000BT, TAB UP, SHIELDED

Contextual Info: 1. M echanical D im ensions: 3. E lectrical Specifications: @25°C A 0 .6 0 0 Max - ISOLATION: — — 1500 V rm s c 0 .3 2 0 TURNS RATIO: P R l/S E C 1CT:1 CT ±2% 0CL: 3 5 0 uH MIN @100KHz 100m V 8mADC INSERTION LOSS: 1 ,2dB MAX 1 OOKHz 1,4dB MAX @ 1 -1 Z5MHz

Contextual Info: KM44C1OOOBSL CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1 OOOBSL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

ZAB005

Abstract: ZAB010 ZAB020 ZAB040 ZAB060 ZAB080 ZAB100
Contextual Info: 6 AMPERE AXIAL LEAD RECTIFIERS HIGH SURGE • PRV TO 1000 VOLTS • 6 AMP RATING • 1000 AMP SURGE • HIGH TEMPERATURE STABILITY • HIGH SURGE CAPABILITY • AVALANCHE CHARACTERISTICS PRV 50V 100V 200V 400V 600V 800V 1000V TYPE NO. ZAB005 ZAB010 ZAB020

csa 8.00mt cm k

Abstract: adpcm MSM6388GS-2K
Contextual Info: O KI Semiconductor MSM6388 ADPCM Solid-State Recorder 1C GENERAL DESCRIPTION The MSM6388 is a "solid-state recorder" IC developed using ADPCM Adaptive Differential Pulse Code Modulation technology. When an external microphone such as a speaker driving amplifier,

Contextual Info: 1. Mechanical Dimensions: 0 .7 3 0 3. Electrical Specifications: @25°C ISOLATION: M ax T U R N S 1500 Vrms R A T IO : P R l/ S E C 1 C T :1 C T ± 2% c D.24Û OCL: 3 5 0 uH MIN @100KHz 100mV 8mADC ,_ 0 .Û 4 5 0 025 0 .0 0 4 E Prl DCR: 0 .5 6 Ohms Max

Contextual Info: SAMSUNG ELECTRONICS INC fa7E D • 7^4142 KM44C1OOOBSL DDlSbfi? bSO ■ SMGK CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1000BSL-6 tRAC tCAC tRC 60ns 15ns 110ns KM44C1000BSL-7 70ns 20ns

Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8

sk 8060

Abstract: 8060c 17p107 KT77 CDA MC UM 7107 D17107 17P103 17p104 BR-F SI-F
Contextual Info: M O S m i» lU i& M O S Integrated C ircu it P i 4 t : 7 h - ' » 1 D 7 1 7 , 1 7 1 7 A i <7)\s3- " j - f ' - * 4 0 P 3 > h n - 7 /¿PD17107liROM1 K / W h (512X16t:-y h) , RAM 16X 4 ti' 7 K 1/0*°- h 11 £ t lT ^ - 5 £ -f “ T-f ? □ = !> h P - 7 t ' t o

gm71c1000b

Abstract: GM71C1000 GM71C1000BJ
Contextual Info: LG S e m ic o n GM71C1000B/BL C o .,L td . 1,048,576 W ORDS x 1 BIT CMOS DYNAM IC RAM Description Features The G M 71C 100QB/BL is the new generation dynamic RAM organized 1,048,576 x 1 bit. G M 71C 1OOOB/BL has realized higher density, higher performance and various functions by utilizing

Contextual Info: DENSE-PAC MICROSYSTEMS 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 P R E L IM IN A R Y D E S C R IP T IO N : Th e D P 5 Z 4 M W 1 6 P n 3 " S L C C " devices are a revolutionary new m em ory subsystem using D ense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996

68U1000

Contextual Info: Preliminary CMOS SRAM KM68U1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast A ccess Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165nW (max.)L-Version

Contextual Info: 3. Electrical Specifications: @25°C 1. Mechanical Dimensions: 0.730 ISOLATION: 1500 Vrms Prf -to Sec Max TURNS RATIO: P R l/S E C 1 CT:1 CT ± 2 % 0CL: 3 5 0 uH MIN @100KHz 100mV 8mADC o Rise Time: 1,75ns Max. 0 .0 4 5 0 .0 2 5 •±=, - it 0 .0 0 4 E

8ca6

Contextual Info: AMDËI '•Rl UMîNAP Am79761 Gigabit Ethernet PHY Layer Products DISTINCTIVE CHARACTERISTICS • Gigabit Ethernet Transceiver operates at 1.25 Gigabits per second (Gbps) ■ Suitable tor both Coaxial and Optical Link applications ■ 10-bit TTL Interface for Transmit and Receive

IEEE Standard 803.2

Abstract: RJ45 connector IEEE 802.3 amp sca-2 IEEE ethernet 803.2
Contextual Info: Catalog 1307515 Issued 9-99 Industry Standards Reference Chart Standard Description Typical AM P Connectors Section IEEE 802.3 10BASE-T http://standards.ieee.org IEEE 802.3 standards for 10Mb/s Ethernet over unshielded twisted pair or 150 Ohm cables 8 position Modular Jacks and Plugs that

kvp smd

Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Contextual Info: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD

Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 4000 5000 EDI type RUSH103 R U S H 104 RUSH105 ELECT R ICAL CH ARACTERISTICS at TA = 25°C, Unless Otherwise Specified