KM641 Search Results

01-I04

Abstract: KM641001A KM641001A-15 KM641001A-20
Contextual Info: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words

Contextual Info: KM641001A CMOS SRAM 256K x 4 Bit With ÜE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation

KM641001

Contextual Info: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words

KM641001

Contextual Info: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.)

Contextual Info: PRELIMINARY KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time 15,17,20 ns(Max.) The KM641001A is a 1,048,576-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 262,144 words

Contextual Info: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

Contextual Info: KM641001A CMOS SRAM Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0

Contextual Info: CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

Contextual Info: CMOS SRAM KM641001 25 6K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641001P/J-20: 150m A (max) K M 641001P/J-25: 130m A (max)

M641005

Contextual Info: KM641005 CMOS SRAM 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20 ,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641005P/J-20: 150m A (max) K M641005P/J-25: 130m A (max)

Contextual Info: KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa st A cce ss T im e 1 5,1 7,20 n s(M ax.) T h e K M 6 4 1 0 0 1 A is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d S ta tic • Low P o w e r D issip a tio n

Contextual Info: KM641003 CMOS SRAM 256K x 4 Bit With OB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 5,1 7,20 ns(M ax.) • Low Pow er Dissipation Standby (TTL) : 4 0 m A(m ax.) (C M O S ): 10 m A(m ax.) Operating K M 6 4 1 0 0 3 -1 5 : 170 m A(m ax.)

KM641003J

Contextual Info: PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM641003J-15: 170mA (Max.)

KM641003B

Abstract: KM641003B-10 KM641003B-12 KM641003B-8
Contextual Info: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target

KM641001

Abstract: KM641001-25 km641001j KM641001-35 741-145
Contextual Info: CM O S SRAM KM 641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e : 2 0 ,2 5 ,35ns max. • L o w P o w e r D issipation S tand by (TTL) : 40m A (max.) (CMOS) : 2m A (max) O pe rating : KM641001 -20 : 150m A (max.)

KM641003J-15

Abstract: KM641003J-20
Contextual Info: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)

bm42

Contextual Info: CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : K M 64 100 3-1 5: 1 70mA (Max.)

KM641003A

Abstract: KM641003A-12 KM641003A-15 KM641003A-20
Contextual Info: PRELIMINARY CMOS SRAM KM641003A 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5 ,1 7 ,2 0 ns(Max.) • Low Pow er Dissipation Standby (TT L) : 3 0 m A(M ax.) Th e K M 641003A is a 1,048,576-bit high-speed Static

Contextual Info: KM641001B CMOS SRAM Document Tills 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 R ev.1.0 Release to Prelim inary Data Sheet.

Contextual Info: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T 'ib M m E D C IlTfafel 41T ■ CMOS SRAM KM641005 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D m 7 T b 4 m 2 D017bMfl 7^5 KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 7 ,2 0 ,2 5 ,30ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.)

Contextual Info: PRELIMINARY KM641003C CMOS SRAM D ocument iiiis m , jg. X S a S j c 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998 Remark Prelim inary The attached d ata sheets are prepared and approved by SAM SU N G Electronics. S AM SU NG Electronics CO., LTD. reserve th e right to change the

Contextual Info: PRELIMINARY KM641001B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.