KM641003 Search Results

Contextual Info: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

Contextual Info: CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.

Contextual Info: KM641003 CMOS SRAM 256K x 4 Bit With OB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 5,1 7,20 ns(M ax.) • Low Pow er Dissipation Standby (TTL) : 4 0 m A(m ax.) (C M O S ): 10 m A(m ax.) Operating K M 6 4 1 0 0 3 -1 5 : 170 m A(m ax.)

KM641003J

Contextual Info: PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM641003J-15: 170mA (Max.)

KM641003B

Abstract: KM641003B-10 KM641003B-12 KM641003B-8
Contextual Info: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target

KM641003J-15

Abstract: KM641003J-20
Contextual Info: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)

bm42

Contextual Info: CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : K M 64 100 3-1 5: 1 70mA (Max.)

KM641003A

Abstract: KM641003A-12 KM641003A-15 KM641003A-20
Contextual Info: PRELIMINARY CMOS SRAM KM641003A 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5 ,1 7 ,2 0 ns(Max.) • Low Pow er Dissipation Standby (TT L) : 3 0 m A(M ax.) Th e K M 641003A is a 1,048,576-bit high-speed Static

Contextual Info: PRELIMINARY KM641003C CMOS SRAM D ocument iiiis m , jg. X S a S j c 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998 Remark Prelim inary The attached d ata sheets are prepared and approved by SAM SU N G Electronics. S AM SU NG Electronics CO., LTD. reserve th e right to change the

Contextual Info: PRELIMINARY CMOS SRAM KM641003C Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Rev. No. History Draft Data Rev. 0.0 Initial Draft Aug. 5. 1998 Remark Prelim inary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the

KM641003C-12

Abstract: KM641003C-15 KM641003C-20 KM641003C
Contextual Info: PRELIMINARY PRELIMINARY KM641003C/CL, KM641003CI/CLI CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary.

KM641003C

Abstract: KM641003C-12 KM641003C-15 KM641003C-20
Contextual Info: PRELIMINARY PRELIMINARY CMOS SRAM KM641003C Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial Draft Aug. 5. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

Contextual Info: P rç ff^ 'in c -y KM641003B/BL, KM641003BI/BLI CMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •■Fast Access Time 8,10,12* • (Max.) Low Power Dissipation Standby (TTL) : 30»• (Max.) The KM641003B/BL is a 1,048,576-bit high-speed Static Ran­

Contextual Info: KM641003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 22th, 1995

Contextual Info: KM641003A, KM641003AI CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: KM641003B CMOS SRAM 256K x 4 Bit with (SEjHigh-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,t2ns(Max. • tow Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM641003B - 8 : 150mA(Max.) KM641003B - 1 0 :145mA(Max.)

KM641003B-12

Abstract: KM641003B-8 KM641003B KM641003B-10
Contextual Info: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997

KM641003A

Abstract: KM641003A-12 KM641003A-15 KM641003A-20
Contextual Info: PRELIMINARY KM641003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: KM641003A CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION N.C E A oU Al H c The KM641003A is a 1,048,576-bit high-speed Static Ftandom Access Memory organized as 262,144 words

Contextual Info: KM641003 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10mA(max.) Operating KM641003-15: 170mA(max.) KM641003-17:1 6 0 mA(max.)

Contextual Info: Preliminary CMOS SRAM KM641003B/BL, KM641003BI/BLI Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark

Contextual Info: KM641003A CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A cce ss T im e 1 2 ,1 5 ,1 7 ,2 0 n s(M ax.) • Low P o w e r D issip a tio n S ta n d b y (T T L ) : 3 0 m A (M a x.) (C M O S ): 10 m A (M a x.)

KM641003C

Abstract: KM641003C-12 KM641003C-15 KM641003C-20
Contextual Info: PRELIMINARY PRELIMINARY KM641003C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5. 1998 Preliminary

KM641003A

Abstract: KM641003A-12 KM641003A-15
Contextual Info: CMOS SRAM KM641003A 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM641003A-12 : 200 mA(Max.) KM641003A-15 : 190 mA(Max.)