KM641001B Search Results
KM641001B Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KM641001B | Samsung Electronics | 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out | Original | 132.99KB | 9 | ||
| KM641001B-15 | Samsung Electronics | 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out | Original | 132.98KB | 9 | ||
| KM641001B-20 | Samsung Electronics | 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out | Original | 132.99KB | 9 | ||
| KM641001BJ-15 | Samsung Electronics | 256K x 4 Bit (with OE)High-Speed CMOS Static RAM | Original | 133.01KB | 9 | ||
| KM641001BJ-20 | Samsung Electronics | 256K x 4 Bit (with OE)High-Speed CMOS Static RAM | Original | 133.01KB | 9 | ||
| KM641001BL-15 | Samsung Electronics | 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out | Original | 132.99KB | 9 |
KM641001B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KM641001BContextual Info: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0 |
Original |
km641001b/bl256kx4120ma110ma+5 | |
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Contextual Info: KM641001B CMOS SRAM Document Tills 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 R ev.1.0 Release to Prelim inary Data Sheet. |
OCR Scan |
km641001b256kx4120ma110ma+3 | |
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Contextual Info: PRELIMINARY KM641001B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet. |
Original |
km641001b256kx4120ma110ma+4 | |
641001
Abstract: Samsung 6410 BL20U
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OCR Scan |
km641001b/blkm641001bi/bli641001b/blkm641+7 | |
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Contextual Info: KM641001B CMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating KM641001B -15 : 120mA(Max.) KM641001B - 20 :1 18mA(Max.) |
OCR Scan |
km641001b120makm641q01bj28-soj-4qoa+1 | |
KM641001BContextual Info: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0 |
Original |
km641001b/bl256kx4120ma110ma+5 | |
KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
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OCR Scan |
256kb32kx8km62256ci-5/5lkm62256cle+16 | |
KM736V789-60
Abstract: 512k*8 sram KM68U4000A
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OCR Scan |
km622s6ckm62256dkm68s12akm68512b+7 |