KM616V4002 Search Results

Lb 598 d

Abstract: KM616V4002A 71L414E
Contextual Info: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17,20* • Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) The KM616V4002A is a 4,194,304-bit high-speed Static Ran­ dom Access Memory organized as 252,144 words by 16 bits.

Scans-0012741

Contextual Info: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

KM616V4002C

Contextual Info: Back PRELIMPreliminaryPPPPPPPPPINARY KM616V4002C/CL, KM616V4002CI/CLI Preliminary CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data

KM616V4002A

Contextual Info: KM616V4002A CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996

U108

Contextual Info: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5 ,2 0 ns M ax. • Low Pow er Dissipation Standby (TTL) : 5 0 mA (M ax.) (C M O S ): 10 mA (M ax.) Operating K M 61 6 V 4 00 2 A -12 : 240 mA (M ax.)

512X16 sram

Abstract: KM616V4002B KM616V4002
Contextual Info: Prr?]>rrTine:y KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION - F astA ccessT im e 10,12,15 *(M a x.) - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM616V4002B/BL is a 4,194,304-bit high-speed Static

Contextual Info: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY Preliminary CMOS SRAM KM616V4002C, KM616V4002CI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0

Contextual Info: KM616V4002B/BL, KM616V4002BI/BLI CMOS SRAM 256K X 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns(Max.) • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.)- L-Ver.

KM616V4002B

Abstract: vdr30
Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data

Contextual Info: Preliminary KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.

Contextual Info: KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* (Max.) - Low Power Dissipation The KM616V4002B/BL is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16

KM616V4002aj

Contextual Info: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20*‘ Max. - Low Power Dissipation Standby (TTL) : 50»»(Max.) (CMOS) : 10*«(Max.) Operating KM616V4002A - 15 : 200 • • (Max.)

Contextual Info: CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997

Contextual Info: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)

KM616V4002C

Abstract: KM616V4002
Contextual Info: KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM • Fast Access Time 10,12,15,20ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 10mA(Max.) 0.5mA(Max.) L-ver.only Operating KM616V4002C/CL - 10 : 170mA(Max.)

Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY KM616V4002C, KM616V4002CI Preliminary CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0

616V4002B

Contextual Info: CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997

KM616V4002B

Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Contextual Info: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16

KM616V4002BT-10

Abstract: PCI9054 VME PMC MT4LC4M16R6TG-6 NM6403 P1386 TMS320C40 KM416V4104B-5 uprx
Contextual Info: Утвержден ЮФКВ.469555.088РЭ-УД Модуль МЦ 4.07 Руководство по эксплуатации ЮФКВ.469555.088РЭ Инв.№ подл. Подп. и дата Взам.инв.№ Инв.№ дублл. Подп. и дата