KM44S64230A Search Results

Contextual Info: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M X 4bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM44S64230A CMOS SDRAM R evision H isto ry

Contextual Info: Preliminary CMOS SDRAM KM44S64230A 16M X 4Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS

XC5L

Contextual Info: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS

RA12

Contextual Info: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999

Contextual Info: KM44S64230A Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Jan., 1999 • PC133 first published. REV. 0 Jan. '99 Preliminary PC133 CMOS SDRAM KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply

RA12

Contextual Info: Preliminary CMOS SDRAM KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS

RA12

Contextual Info: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 JUN 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999

Contextual Info: Preliminary CMOS SDRAM KM44S64230A 16M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S64230A is 268,435,456 bits synchronous high data • JEDEC standard 3.3V power supply rate Dynam ic RAM organized as 4 x 16,785,216 w o rds by 4

Contextual Info: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 JUN 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999

Contextual Info: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS

Contextual Info: SDRAM MODULE Preliminary KMM377S6450AT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S6450AT2 SDRAM MODULE KMM377S6450AT2 SDRAM DIMM (Intel 1.1 ver. Base)

KMM377S6450AT3-GL

Abstract: KMM377S6450AT3-GH
Contextual Info: SDRAM MODULE KMM377S6450AT3 KMM377S6450AT3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S6450AT3 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6450AT3 consists of eighteen CMOS 64Mx4

PC133 registered reference design

Abstract: KMM390S6450AT1-GA
Contextual Info: KMM390S6450AT1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions

Contextual Info: KM48S32230A CMOS SDRAM 256Mbit SDRAM 8M X 8bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM48S32230A CMOS SDRAM R evision H isto ry

Contextual Info: KMM377S6450AT3 PC100 Registered DIMM Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

Contextual Info: Preliminary CMOS SDRAM KM48S32230A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data • LVTTL compatible with multiplexed address rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,

KMM377S6450AT2-GH

Abstract: CDC2509
Contextual Info: SDRAM MODULE KMM377S6450AT2 KMM377S6450AT2 SDRAM DIMM Intel 1.1 ver. Base 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S6450AT2 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6450AT2 consists of eighteen CMOS 64Mx4

CDC2509

Contextual Info: KMM377S6450AT3 PC100 Registered DIMM Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

RA12

Contextual Info: Preliminary CMOS SDRAM KM48S32230A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,

Contextual Info: Preliminary CMOS SDRAM KM416S16230A 4M X 16Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S64230A is 268,435,456 bits synchronous high data • JED EC standard 3.3V pow er supply rate Dynam ic RAM organized as 4 x 4,196,304 w ords by 16

KMM390S6450AT-GA

Abstract: PC133 registered reference design
Contextual Info: KMM390S6450AT Preliminary PC133 SDRAM MODULE Revision History Revision 0 Jan. 1999 • PC133 first published REV. 0 Jan. 1999 Preliminary PC133 SDRAM MODULE KMM390S6450AT KMM390S6450AT SDRAM DIMM (RCC 0.8ver. Base) 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .