KM23C1010
Abstract: KM23C1000
Contextual Info: KM23C1000/1010 CMOS MASK ROM 1M-Bit 128Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C1000: 28-pln DIP (Polarity programmable chip enable pin) • KM23C1010: 32-pln DIP (Polarity programmable chip enable pin and output enable pin) • 131,072 x 8 bit organization
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km23c1000/1010128kx8km23c100028-pln+4km23c101032-pln120ns100pa
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KM23C1010
Contextual Info: CMOS MASK ROM KM23C1000/1010 1M-Bit 128K X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C1000: 28-pin DIP (Polarity programmable chip enable pin) • KM23C1010: 32-pin DIP (Polarity programmable chip enable pin and output enable pin) • 131,072 x 8 bit organization
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km23c1000/1010km23c100028-pinkm23c1010+432-pin120ns100pa072x8
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41c25641c25741c25841c464+1441c46641c100044c25644c25844c1002tc51257fujitsu 814100tc 55464 toshibahn62304hn623257658128816bhn62324m7202a
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mask rom
Contextual Info: KM23C1000/1010 G/J CMOS MASK ROM (128Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072x 8 bit organization • Fast access tim e: 120ns(max). • Supply voltaga: singie+5V •Current consumption Operating: 30 mA(max.) Standby: 50/<A(max.) • Fully static operation
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km23c1000/1010128kx8120ns28-pin+432-pin600mil525milmask rom
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41c25641c25741c25841c464+1441c46641c100041c100244c25644c25841c4000tc55b8128424170 neccy7019944c1000iot7164hn62308bphn62404ptc5116100
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416c25614800a14900a514170b+16514280bkm23c16000gkm23c16100gkm23c16000fpkm23c16100fphn624017fbk93c4693cs46nmb832001hn6230841c100093c46ln41464hn623257hm63832dt71256
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KM23C1010
Contextual Info: KM23C1000/1010 CMOS MASK ROM 1M-Bit 128K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C1000: 28-pln DIP (Polarity programmable chip enable pin) • KM23C1010: 32-pin DIP (Polarity programmable chip enable pin and output enable pin) • 131,072x8 bit organization
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km23c1000/1010km23c100028-plnkm23c1010+432-pin072x8120ns100jia
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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tc511001tc514101514170b514280b+16tc5316200pkm2x16100km23c16000gkm23c16100gkm23c16000fpkm23c16100fptc55b8128km23c4000agtc534000afhn62308bptc551632hitachi crossmb8368512uhitachi 64k dramtc55b4256
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23c1000
Abstract: KM23C1010 KM23C1000-20 mask rom KM23C1010G
Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 ODlbTH? b04 b7E D CMOS MASK ROM KM23C 1000/1010 G/J 1M-Bit (128K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072 X 8 bit organization • Fast access tim e: 120ns(max). • Supply voltage: single+5V • Current consumption
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120ns50jua28-pin600mil+832-pin525milkm23c1000/101023c1000km23c1010km23c1000-20mask romkm23c1010g
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