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    KM23C1010G Search Results

    KM23C1010G Datasheets Context Search

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    KM23C1010

    Abstract: KM23C1000
    Contextual Info: KM23C1000/1010 CMOS MASK ROM 1M-Bit 128Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C1000: 28-pln DIP (Polarity programmable chip enable pin) • KM23C1010: 32-pln DIP (Polarity programmable chip enable pin and output enable pin) • 131,072 x 8 bit organization


    OCR Scan     		KM23C1000/1010 128Kx8) KM23C1000: 28-pln KM23C1010: 32-pln 120ns 100pA KM23C1000/1010 KM23C1000) KM23C1010 KM23C1000 PDF

    KM23C1010

    Contextual Info: CMOS MASK ROM KM23C1000/1010 1M-Bit 128K X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C1000: 28-pin DIP (Polarity programmable chip enable pin) • KM23C1010: 32-pin DIP (Polarity programmable chip enable pin and output enable pin) • 131,072 x 8 bit organization


    OCR Scan     		KM23C1000/1010 KM23C1000: 28-pin KM23C1010: 32-pin 120ns 100pA KM23C1000/1010 072x8 KM23C1010) KM23C1010 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    mask rom

    Contextual Info: KM23C1000/1010 G/J CMOS MASK ROM (128Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072x 8 bit organization • Fast access tim e: 120ns(max). • Supply voltaga: singie+5V •Current consumption Operating: 30 mA(max.) Standby: 50/<A(max.) • Fully static operation


    OCR Scan     		KM23C1000/1010 128Kx8) 120ns 28-pin, 32-pin, 600mil, 525mil, mask rom PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 PDF

    KM23C1010

    Contextual Info: KM23C1000/1010 CMOS MASK ROM 1M-Bit 128K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C1000: 28-pln DIP (Polarity programmable chip enable pin) • KM23C1010: 32-pin DIP (Polarity programmable chip enable pin and output enable pin) • 131,072x8 bit organization


    OCR Scan     		KM23C1000/1010 KM23C1000: 28-pln KM23C1010: 32-pin 072x8 120ns 100jiA KM23C1000/1010 KM23C1010) KM23C1010 PDF

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 PDF

    23c1000

    Abstract: KM23C1010 KM23C1000-20 mask rom KM23C1010G
    Contextual Info: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 ODlbTH? b04 b7E D CMOS MASK ROM KM23C 1000/1010 G/J 1M-Bit (128K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072 X 8 bit organization • Fast access tim e: 120ns(max). • Supply voltage: single+5V • Current consumption


    OCR Scan     		120ns 50juA 28-pin, 600mil, 32-pin, 525mil, KM23C1000/1010 23c1000 KM23C1010 KM23C1000-20 mask rom KM23C1010G PDF