KHB2D0N Search Results

2D0N60F

Abstract: KHB2D0N60F KHB 2D0N60F 2d0n60 khb*2d0n60f
Contextual Info: SEMICONDUCTOR KHB2D0N60F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking. 2. Marking KHB 2D0N60F 515 No. 2005. 7. 28 1 2 Item Marking Description Device Name KHB2D0N60F KHB2D0N60F Lot No. 515 Revision No : 0 5 Year 0~9 : 2000~2009 15

khb*2D0N60P

Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

O2W transistor

Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

khb*2D0N60P

Abstract: KHB2D0N60P 11T-H KHB2D0N
Contextual Info: SEMICONDUCTOR KHB2D0N60P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking. 2. Marking KHB2D0N 60P 1 511 No. 2005. 10. 13 2 Item Marking Description Device Name KHB2D0N60P KHB2D0N60P Lot No. 511 Revision No : 1 5 Year 0~9 : 2000~2009 11

RG 2006 10A 600V

Contextual Info: SEMICONDUCTOR KHB2D0N60P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

khb*2D0N60P

Abstract: KHB2D0N60F equivalent KHB2D0N60F KHB2D0N60P AVALANCHE TRANSISTOR
Contextual Info: SEMICONDUCTOR KHB2D0N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

2d0n60f

Abstract: KHB 2D0N60F 2d0n60 KHB2D0N60F2 khb*2d0n60f KHB2D0N60F laser marking marking 5
Contextual Info: SEMICONDUCTOR KHB2D0N60F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 2D0N60F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB2D0N60F2 KHB2D0N60F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009

Contextual Info: SEMICONDUCTOR KHB2D0N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

khb*2D0N60P

Contextual Info: SEMICONDUCTOR KHB2D0N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

khb*2D0N60P

Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N mosfet 600v 10a to-220ab KHB2D0N60F equivalent
Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors