KEMET C CHIP DATA SHEET Search Results

Contextual Info: KEMET AO-CAP Data Sheet KEMET’s AO-CAP, designated the A700 Series, hasbeentargeted for power management applications. The structure of the AO-CAP uses aluminum as the anode material, aluminum oxide asthe dielectric,and a conductive organic polymer for its counter-electrode material.

1016a

Contextual Info: Product Data Sheet T498 Series - KEMET High Temperature 150°C Tantalum Chip Capacitor Features • • • • • 150°C Maximum temperature capability Temperature/Voltage derating: 2/3 at 150°C Self-healing mechanism Capacitance: 0.47 to 220µF Reliability: 0.5%/1000 Hrs. @ rated voltage

Contextual Info: KEMET AO-CAP Data Sheet A700 Series - AO-CAP - Aluminum Organic Capacitor Low-ESR Surface-Mount Aluminum Capacitor with Polymer Cathode KEMET’s AO-CAP, designated the A700 Series, has beentargeted for power management applications. The structure of the AO-CAP

ATC100B101JW500X

Abstract: ATC100B1R0BW500X C1206104K5RAC GRM43-2X7R10 AGRA10GM JESD22-C101A c.d.m. technology avx 2743019446 AVX Manufacture Label MA4853
Contextual Info: Preliminary Data Sheet September 2004 AGRA10GM Plastic Overmold 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS plastic overmold RF power

ATC100B101JW500X

Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
Contextual Info: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to

KX7r

Abstract: transistor c322 marking 34x C102m 102k 2000v KEMET C330 SERIES 183 2000v diode 3000v Sc 6200 equivalent C315
Contextual Info: Product Data Sheet Ceramic Conformally Coated/Radial High Voltage Golden Max Outline Drawings Dimensions – Inches & Milimeters Case Size L Max. H Max. T Max. C315 C317 C320 C322 C323 C330 C333 C340 C350 .150 3.81 .150 (3.81) .200 (5.08) .200 (5.08) .200 (5.08)

240x240 lcd

Contextual Info: Flex Suppressor EF Series Overview Applications The EF Series Flex Suppressor ® is an effective suppressor for high frequency noise generated from electronic devices. The flexible sheet is a polymer base blended with micron sized magnetic powders dispersed into the material. The EF Series are

tns capacitors

Abstract: capacitor F3 037 02 100B120FW500X
Contextual Info: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

AGRA10E

Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable

Z5 1512

Contextual Info: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input

MMG3014NT1

Abstract: C0805C209J5GAC ERJ-3GEY0R00V A113 A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 0, 4/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

250GX-0300-55-22

Abstract: ATC100B102JT50XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in

KX7r

Abstract: 273 j 1000v
Contextual Info: Product Data Sheet Ceramic Conformally Coated/Radial High Voltage Golden Max Outline Drawings Dimensions – Inches & Milimeters Case Size L Max. H Max. T Max. C315 C317 C320 C322 C323 C330 C333 C340 C350 .150 3.81 .150 (3.81) .200 (5.08) .200 (5.08) .200 (5.08)

Arlon CuClad PCB board material

Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with

Z5 1512

Abstract: ERJ-3GEY0R00V MMG3014NT1 567 tone A114 A115 AN1955 C0603C104J5RAC C0805C221J5GAC C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 1, 9/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

KX7r

Contextual Info: Product Data Sheet Ceramic Conformally Coated/Radial High Voltage Golden Max Outline Drawings Dimensions – Inches & Milimeters Case Size L Max. H Max. T Max. C315 C317 C320 C322 C323 C330 C333 C340 C350 .150 3.81 .150 (3.81) .200 (5.08) .200 (5.08) .200 (5.08)

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

Z5 1512

Abstract: M3014N 12065J0R2BS C0805C225J4RAC SOT89A C0603C119J5GAC ERJ-3GEY0R00V C0603C189J5GAC C0805C209J5GAC PCN13337
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

AGR045010

Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Contextual Info: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

RF1000LF

Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

B10T

Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with

ATC100B910

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with

250GX-0300-55-22

Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with