C1206104K5RAC Search Results

J593

Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Contextual Info: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

J161 mosfet transistor

Abstract: MOSFET J161 100B6R8JW
Contextual Info: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

mosfet 1412

Contextual Info: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

Contextual Info: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

AGR21045EF

Abstract: AGR21045XF JESD22-C101A
Contextual Info: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

100B100JW500X

Abstract: AGR09090EF JESD22-C101A
Contextual Info: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

SBR2U30P1

Contextual Info: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments The AL8806 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a

AGR21030EF

Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
Contextual Info: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

"RF Power Transistor"

Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Pin Assignments Description MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a

J964

Abstract: AGR21045EF AGR21045XF JESD22-C101A
Contextual Info: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and

C20 CT

Abstract: 100B220 sprague CT series
Contextual Info: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

12v transformer

Abstract: 0R089 capacitor 470uf 25v diode 51X 25ZLH470M NPIS64 AL8806MP8-13 capacitor 470uF SBR2U30P1
Contextual Info: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a

ELECTRONIC TRANSFORMER FOR A 12V HALOGEN LAMP

Abstract: 25ZLH470M
Contextual Info: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a

sm 4500

Contextual Info: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless

Contextual Info: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution

Contextual Info: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

J299

Contextual Info: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Johanson Technology

Contextual Info: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

926 sprague

Contextual Info: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

Contextual Info: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

AL8806

Abstract: PowerDI-123 electronic transformer halogen 12v capacitor 470uf 25v NMC1206X7R104K50TRPF 0R082 B140 B240 DFLS230LH 0R089
Contextual Info: AL8806 HIGH EFFICIENCY 30V 1.5A BUCK LED DRIVER Pin Assignments The AL8806 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a voltage source of 6V to 30V. The AL8806