KE MARKING TRANSISTOR Search Results

ke marking transistor

Abstract: 2SJ168 2SK1062 marking transistor KE marking jyw JYW marking marking ke toshiba
Contextual Info: TOSHIBA 2SK1062 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE 2 S K 1 062 HIGH SPEED SW ITCHING APPLICATIONS Unit in mm A N A L O G SW ITCHING APPLICATIONS + 0.5 2 .5 - 0 .3 INTERFACE APPLICATIONS + 0.25 1 .5 -0 .1 5 Excellent Switching Time : ton = 14ns Typ.

Contextual Info: MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching SOT-363 H A h R FI KXX Mechanical Data_ TB C 1 • • • • • Case: SOT-363, Molded Plastic

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

Contextual Info: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance

Contextual Info: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage :V d S S = —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA

Contextual Info: T O SH IB A RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS I- 0.5 • • • • With Built-in Bias Resistors

2SK1875

Contextual Info: TOSHIBA 2SK1875 T O SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 875 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS 2.1 ± 0.1 A M HIGH FREQUENCY AMPLIFIER APPLICATIONS 1.25 ±0.1 3- A U D IO FREQUENCY AMPLIFIER APPLICATIONS •

TRANSISTOR MARKING TE US6

Contextual Info: TOSHIBA RN1970,RN1971 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1970, RN1971 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2.1 ± 0 .1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 ± 0 .1 “ — ;- 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)

ke marking transistor

Contextual Info: T O SH IB A 2SK3051 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K3 0 51 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1967, RN1968, RN 1969 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT . ± 2 1 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25±0.1 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)

Contextual Info: T O SH IB A RN2107-RN2109 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107, RN2108, RN2109 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • W ith Built-in Bias Resistors • Simplify Circuit Design •

2SC5111

Contextual Info: 2SC5111 TOSHIBA 2 S C 5 1 11 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm r0.8 .0.1-i ± M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

2SC5110

Abstract: IC IL 1117
Contextual Info: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

E6327

Abstract: Q67000-S067
Contextual Info: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067

Contextual Info: T O S H IB A 2SC5106 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 06 Unit in mm FOR VCO APPLICATION M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Q67000-S200

Abstract: E6327
Contextual Info: BSP 298 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = 2.1 . 4.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 298 400 V 0.5 A 3Ω SOT-223 BSP 298 Type BSP 298 Ordering Code

Contextual Info: T O S H IB A RN1901 ~RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 Including Two Devices in US6

Contextual Info: TO S H IBA RN2101 ~RN2106 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101, RN2102, RN2103, RN2104, RN2105, RN2106 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ± 0.2 A N D DRIVER CIRCUIT APPLICATIONS. 0.8 ± 0.1 in •

Contextual Info: TOSHIBA 2SK2173 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2 S K 2 1 73 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 5 .9 M A X .

Contextual Info: 2SK1120 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm • Low Drain-Source ON Resistance

Contextual Info: TOSHIBA RN1701 ~R N 1706 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1701, RN1702, RN1703, RN1704, RN1705, RN1706 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 -0 .1 -m- »

SC5231

Contextual Info: SA0YO NEW PRODUCT S M C P S u p e r Mini C h i p P a c k T r a n s i s t o r s e r i e s The n e w l y d e v e l o p e d S a ny o SMCP pack ag e can make the sets more compact and slimmer because of a super mini package. We h a v e va ri o u s pr o d u c t s for su ch a p p l ic at io ns as shown below. In addition, we can provide you with re el-style packing

sw 2604 ic

Abstract: ic sw 2604 Transistor S 2606 YC+2604
Contextual Info: TO SHIBA RN2601 ~RN2606 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND Unit in mm DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)