2SC4944 Search Results

Contextual Info: 2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4944 Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120 to 400

2SA1873

Abstract: 2SC4944
Contextual Info: 2SC4944 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4944 ○ 低周波増幅用 単位: mm • ウルトラスーパーミニ (5 端子) パッケージに 2 素子を内蔵しています。 • 2 素子間のペア性が良い。

Contextual Info: Reliability Tests Report Product Name: 2SC4944 Package Name: USV 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

MARKING 25J

Abstract: marking IAY 2SA1873 2SC4944
Contextual Info: TOSHIBA 2SC4944 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4944 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 110.1 1.25 ± 0.1 . Small Package (Dual Type) High Voltage and High Current : V0EO-5OV, 10 = 150mA (Max.)

2SA1873

Abstract: 2SC4944
Contextual Info: 2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4944 Audio Frequency General Purpose Amplefier Applications • Small package (dual type) · High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · High hFE: hFE = 120~400 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4944 A U D IO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. Small Package Dual Type High Voltage and High Current : V q e O = 50V, Ic = 150mA (Max.) High h]?E : hj?E = 120—400 Excellent hpg Linearity : h fE (^C = 0.1mA) / hpg (Iç = 2mA) =0.95 (Typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors 2SC4944 DUAL TRANSISTOR NPN+NPN SOT-353 Features z Small package (dual type) z High voltage and high current z High hFE, excellent hFE linearity z Complementary to 2SA1873

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encap sulate Transistors 2SA1873 DUAL TRANSISTOR PNP+PNP SOT-353 Features z Small package (dual type) z High voltage and high current z High hFE z Excellent hFE linearity z Complementary to 2SC4944

2SA1873

Abstract: 2SC4944
Contextual Info: 2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4944 Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~400 •

Contextual Info: T O SH IB A 2SC4944 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4944 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. ± 2.1 0.1 1.25 ± 0.1 , Small Package (Dual Type) D High Voltage and High Current : V(2EO = 50V, 1(3 = 150mA (Max.)

Contextual Info: TOSHIBA 2SC4944 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS n r j Q A d Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 ± 0.1 , 1.2 5 ± 0.1 . Small Package (Dual Type) n High Voltage and High. Current : V c e O = 50V, Ic = 150mA (Max.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors 2SA1873 DUAL TRANSISTOR PNP+PNP SOT-353 Features z Small package (dual type) z High voltage and high current z High hFE z Excellent hFE linearity z Complementary to 2SC4944

Contextual Info: 2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4944 Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~400 •

BD123

Abstract: marking 25j 2SA1873 2SC4944
Contextual Info: TO SH IBA 2SC4944 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4944 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 ±0.1 1.25 ±0.1 Small Package (Dual Type) High Voltage and High Current : V0EO-5OV, 10 = 150mA (Max.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1873

Abstract: 2SC4944
Contextual Info: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Contextual Info: TOSHIBA 2SA1873 2 S A 1 873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. Small Package (Dual Type) High Voltage and High Current : VC E 0= —50V, I e = - 150mA (MAX.) High hpE Excellent hjrg Linearity

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SA1873

Abstract: 2SC4944
Contextual Info: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ