2SJ168 Search Results

2SJ168

Abstract: 2SK1062 Toshiba 2SJ
Contextual Info: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

Contextual Info: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SJ168

Abstract: 2SK1062
Contextual Info: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

Contextual Info: TOSHIBA 2SJ168 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS + 0.25 Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance

2SJ168

Abstract: 2SK1062 2SK106
Contextual Info: TO SH IBA 2SJ168 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance

2SJ168

Abstract: 2SK1062 TOSHIBA 2SJ168
Contextual Info: TOSHIBA 2SJ168 2 S J 1 68 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS + 0.25 1.5-0.15 Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance

2SK106

Contextual Info: 2SJ168 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm • • Excellent Switching Time: ton = 14ns Typ. High Forward Transfer Admittance

2SJ168

Contextual Info: SILICON P CHANNEL MOS TYPE 2SJ168 HIGH S PEED S WITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. Unit in mm INTERFACE APPLICATIONS. . Excellent Switching Time + 0.5 2.5 -0 .3 : t0n = 1 4 n s T y p . . High Forward Transfer Admittance : I Yfs I = 100mS(Min.)

Toshiba 2SJ

Contextual Info: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SJ168

Abstract: 2SK1062
Contextual Info: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SK1062

Abstract: 2SJ168
Contextual Info: 2SJ168 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ168 ○ 高速スイッチング用 ○ アナログスイッチ用 ○ インタフェース用 • スイッチング時間が速い。 単位: mm : ton = 14 ns 標準 • 順方向伝達アドミタンスが高い。 : |Yfs| = 100 mS (最小)

Contextual Info: Reliability Tests Report Product Name: 2SJ168 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

transistor RJp

Contextual Info: 2SJ168 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS • • • Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance

Contextual Info: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Contextual Info: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance

2sj111

Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

2SJ168

Abstract: 2SK1062 1318F
Contextual Info: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS + 0.5 2.5-0.3 + 0.25 1.5-0.15 ANALO G SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Sw itching Time : ton = 14 ns Typ.

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.