K4E66161 Search Results

K4E641611D

Abstract: K4E661611D
Contextual Info: K4E661611D, K4E641611D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this

K4E641612E

Abstract: K4E661612E K4E641612E-T
Contextual Info: Industrial Temperature K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden

K4E641612D-TC

Abstract: K4E641612D K4E641612D-T K4E661612D K4E641612
Contextual Info: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612C

Abstract: K4E641612C-T K4E661612C K4E661612C-T
Contextual Info: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

k4e641611c

Contextual Info: K4E661611C, K4E641611C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this

Contextual Info: K4E661611B,K4E641611B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60) are optional features of this

K4E641612B

Abstract: K4E661612B
Contextual Info: K4E661612B, K4E641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612D

Abstract: K4E641612D-T K4E661612D
Contextual Info: Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden

K4E641612E

Abstract: K4E661612E
Contextual Info: K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612D-T

Abstract: K4E661612D K4E641612D
Contextual Info: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612C

Abstract: K4E641612C-T K4E661612C K4E661612C-T
Contextual Info: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

Contextual Info: DRAM MODULE M366F080 8 4DT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4DT1-C DRAM MODULE M366F080(8)4DT1-C

Contextual Info: DRAM MODULE M364E080 8 4CT0-C Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E080(8)4CT0-C DRAM MODULE M364E080(8)4CT0-C

K4E641612D

Contextual Info: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C

Contextual Info: DRAM MODULE M364E040 8 4BT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M364E040(8)4BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: DRAM MODULE M364E040 8 4CT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E040(8)4CT0-C DRAM MODULE M364E040(8)4CT0-C

l80225/b

Abstract: k4s281632 KA78R33 samsung toggle NAND XCV800BG560 S3F460H serial flash M25 128kb STM L80225B 15 pin D sub connector xc18v04pc44
Contextual Info: S3F460H 1 PRODUCT OVERVIEW PRODUCT OVERVIEW INTRODUCTION SAMSUNG’s Integration Platform is designed to provide a cost-effective, and high performance micro-controller solution for printer and general application. To design of User logic, Integration Platform provides the following :

K4E641612D-T

Abstract: k4e641612dt
Contextual Info: DRAM MODULE M366F080 8 4DT1-C M366F080(8)4DT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4DT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4DT1-C consists of eight CMOS 4Mx16bits

Contextual Info: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic

Contextual Info: DRAM MODULE M366F040 8 4CT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4CT1-C DRAM MODULE M366F040(8)4CT1-C

K4E641612D-T

Contextual Info: DRAM MODULE M366F040 8 4DT1-C M366F040(8)4DT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4DT1-C is a 4Mx64bits Dynamic RAM high density memory module. The Samsung M366F040(8)4DT1-C consists of four CMOS 4Mx16bits

TAA 141

Contextual Info: DRAM MODULE M366F040 8 4BT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F040(8)4BT1-C M366F040(8)4BT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4BT1-C is a 4Mx64bits Dynamic