K4E641612B Search Results
K4E641612B Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| K4E641612B | Samsung Electronics | 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 903.69KB | 36 | ||
| K4E641612B-L | Samsung Electronics | 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 903.68KB | 36 | ||
| K4E641612B-TC | Samsung Electronics | 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out | Original | 903.68KB | 36 | ||
| K4E641612B-TC45 | Samsung Electronics | 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Original | 903.69KB | 36 | ||
| K4E641612B-TC50 | Samsung Electronics | 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Original | 903.69KB | 36 | ||
| K4E641612B-TC60 | Samsung Electronics | 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Original | 903.69KB | 36 | ||
| K4E641612B-TL45 | Samsung Electronics | 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Original | 903.69KB | 36 | ||
| K4E641612B-TL50 | Samsung Electronics | 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Original | 903.69KB | 36 | ||
| K4E641612B-TL60 | Samsung Electronics | 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Original | 903.69KB | 36 |
K4E641612B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
K4E641612B
Abstract: K4E661612B
|
Original |
k4e661612bk4e641612b16bit4mx16+1 | |
capacitor taaContextual Info: DRAM MODULE M466F0404BT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.2 June 1998 DRAM MODULE M466F0404BT2-L M466F0404BT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404BT2-L is a 4Mx64bits Dynamic |
Original |
m466f0404bt2-l4mx644mx164mx64bits+2 | |
|
Contextual Info: DRAM MODULE M374F0805BT1-C Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M374F0805BT1-C DRAM MODULE M374F0805BT1-C |
Original |
m374f0805bt1-c8mx724mx168mx72bits | |
|
Contextual Info: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic |
Original |
m366f0808mx644mx168mx64bits+1 | |
|
Contextual Info: M372F0405BT0-C DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M372F0405BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. |
Original |
m372f0405bt0-c4mx724mx16100min+2 | |
TAA 141Contextual Info: DRAM MODULE M366F040 8 4BT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F040(8)4BT1-C M366F040(8)4BT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4BT1-C is a 4Mx64bits Dynamic |
Original |
m366f0404mx644mx164mx64bits+2 | |
|
Contextual Info: DRAM MODULE M466F0804BT1-L 8Byte 8Mx64 SODIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M466F0804BT1-L Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. |
Original |
m466f0804bt1-l8mx644mx168mx64bits+1 | |
|
Contextual Info: DRAM MODULE M374F0405BT1-C Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied to this module. M374F0405BT1-C DRAM MODULE M374F0405BT1-C |
Original |
m374f0405bt1-c4mx724mx164mx72bits |