K4E661612B Search Results

K4E641612B

Abstract: K4E661612B
Contextual Info: K4E661612B, K4E641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

Contextual Info: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic

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Contextual Info: DRAM MODULE M366F040 8 4BT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F040(8)4BT1-C M366F040(8)4BT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4BT1-C is a 4Mx64bits Dynamic