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    K4E641612E Datasheets (4)

    Samsung Electronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    K4E641612E
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet Original PDF 399.85KB 36
    K4E641612E
    		Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet Original PDF 403.63KB 36
    K4E641612E-TC/L
    		Samsung Electronics DRAM Module, 4Mx16 Bit CMOS DRAM With Extended Data Out Original PDF 399.85KB 36
    K4E641612E-TI/P
    		Samsung Electronics DRAM Module, 4Mx16 Bit CMOS DRAM With Extended Data Out Original PDF 403.63KB 36
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    K4E641612E Price and Stock

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    Samsung Semiconductor & Electro-Mechanics K4E641612E-TI50

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    Bristol Electronics K4E641612E-TI50 53
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    Samsung Electro-Mechanics K4E641612E-TL60

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    Quest Components K4E641612E-TL60 70
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    Samsung Electronics Co. Ltd K4E641612ETL60

    4M X 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT EDO DRAM, 4MX16, 60ns, CMOS, PDSO50
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    ComSIT USA K4E641612ETL60 960
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    K4E641612E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K4E641612E

    Abstract: K4E661612E K4E641612E-T
    Contextual Info: Industrial Temperature K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden


    Original     		k4e661612ek4e641612e16bit4mx16+2400milk4e641612e-t PDF

    K4E641612E

    Abstract: K4E661612E
    Contextual Info: K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		k4e661612ek4e641612e16bit4mx16+1400mil PDF