K4E641612 Search Results

K4E641612E

Abstract: K4E661612E K4E641612E-T
Contextual Info: Industrial Temperature K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden

K4E641612D-TC

Abstract: K4E641612D K4E641612D-T K4E661612D K4E641612
Contextual Info: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612C

Abstract: K4E641612C-T K4E661612C K4E661612C-T
Contextual Info: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612B

Abstract: K4E661612B
Contextual Info: K4E661612B, K4E641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612D

Abstract: K4E641612D-T K4E661612D
Contextual Info: Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden

K4E641612E

Abstract: K4E661612E
Contextual Info: K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612D-T

Abstract: K4E661612D K4E641612D
Contextual Info: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E641612C

Abstract: K4E641612C-T K4E661612C K4E661612C-T
Contextual Info: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

Contextual Info: DRAM MODULE M366F080 8 4DT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4DT1-C DRAM MODULE M366F080(8)4DT1-C

K4E641612D

Contextual Info: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C

Contextual Info: DRAM MODULE M366F080 8 4CT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4CT1-C DRAM MODULE M366F080(8)4CT1-C

Contextual Info: DRAM MODULE M372F0405CT0-C Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th.(4th.) generation of 64M(16M) components are applied to this module. M372F0405CT0-C DRAM MODULE M372F0405CT0-C

K4E641612D-T

Contextual Info: DRAM MODULE M374F0405DT1-C M374F0405DT1-C EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0405DT1-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M374F0405DT1-C consists of four CMOS 4Mx16bits DRAMs

capacitor taa

Contextual Info: DRAM MODULE M466F0404BT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.2 June 1998 DRAM MODULE M466F0404BT2-L M466F0404BT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404BT2-L is a 4Mx64bits Dynamic

Contextual Info: DRAM MODULE M374F0405CT1-C Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied to this module. M374F0405CT1-C DRAM MODULE M374F0405CT1-C

K4E641612D-TL 50

Contextual Info: DRAM MODULE M466F0804DT1-L 8Byte 8Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0804DT1-L DRAM MODULE M466F0804DT1-L M466F0804DT1-L EDO Mode

Contextual Info: DRAM MODULE M372F0405DT0-C Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th.(4th.) generation of 64M(16M) components are applied to this module. M372F0405DT0-C DRAM MODULE M372F0405DT0-C

K4E641612D-TL 50

Contextual Info: DRAM MODULE M466F0404DT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0(Dec. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0404DT2-L DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode

Contextual Info: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification

Contextual Info: DRAM MODULE M372F0405DT0-C M372F0405DT0-C EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372F0405DT0-C consists of four 4Mx16bits & two 4Mx4bits

K4E641612D-T

Abstract: k4e641612dt
Contextual Info: DRAM MODULE M366F080 8 4DT1-C M366F080(8)4DT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4DT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4DT1-C consists of eight CMOS 4Mx16bits

Contextual Info: DRAM MODULE M374F0805BT1-C Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M374F0805BT1-C DRAM MODULE M374F0805BT1-C

Contextual Info: DRAM MODULE M466F0804CT1-L 8Byte 8Mx64 SODIMM 4Mx16 base Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0804CT1-L DRAM MODULE M466F0804CT1-L M466F0804CT1-L EDO Mode

Contextual Info: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic