K100F Search Results

Contextual Info: 2,500 V -10,000 V Rectifiers K25F K50F K100F 1.5 A - 3.0 A Forward Current 200 ns Recovery Time AXIAL LEADED EPOXY MOLDED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Foward

K100F

Abstract: K25F K50F
Contextual Info: K25F K50F K100F 2,500 V - 10,000 V Rectifiers 1.5 A - 3.0 A Forward Current 200 ns Recovery Time AXIAL LEADED EPOXY MOLDED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Foward

K100F

Abstract: K60F K80F
Contextual Info: K60F K80F K100F HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 200nS RECOVERY V rw m AXIAL LEADED in. mm I F T rr = 6000-10000V = 1.5A = 200nS ,375±.015 (9.53±.38) ,250±.015 (6.35±.38) L •093±.003 (2.36±.06) .40(10.16) Min. ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS

K100F

Abstract: K50F K25F
Contextual Info: K25F K50F K100F 2,500 V - 10,000 V Rectifiers 1.5 A - 3.0 A Forward Current 200 ns Recovery Time AXIAL LEADED EPOXY MOLDED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Foward

Contextual Info: K25F K50F K100F 2,500 V - 10,000 V Rectifiers 1.5 A - 3.0 A Forward Current 200 ns Recovery Time AXIAL LEADED EPOXY MOLDED Original Released: 07-22-99 Revised Date: 11-13-08 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage

K100F

Abstract: K25F K50F
Contextual Info: K25F K50F K100F 2,500 V - 10,000 V Rectifiers 1.5 A - 3.0 A Forward Current 200 ns Recovery Time AXIAL LEADED EPOXY MOLDED Original Released: 07-22-99 Revised Date: 11-13-08 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage

K100F06K

Abstract: TK100 TK100F06K3
Contextual Info: K100F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV K100F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • 取り扱いが簡単なエンハンスメントタイプです。

Contextual Info: K100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TK100F04K3

Abstract: K100F04K
Contextual Info: K100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

toshiba transistor date code marking

Abstract: TK100F06K3 K100F06K
Contextual Info: K100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)

Contextual Info: K100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)

sharp laser diodes

Abstract: OC100G
Contextual Info: Table of Contents PAGE SURFACE MOUNT MOLDED DIODES 30ns 420mA, 2000V . 08 - 09 70ns 50mA - 250mA, 150mA - 500mA, 2000V - 5000V .

Contextual Info: K100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

X200SG

Abstract: Z100SG 1N6521U
Contextual Info: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000

K25UF

Contextual Info: HIGH VOLTAGE RECTIFIERS 100ns-3000ns Recovery • Axial Leaded • Epoxy Molded ELE C TR IC AL C H A R A C TE R IS TIC S A ND M AXIM UM RATING S Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (1)

K100F04K

Abstract: TK100F04K3 TK100
Contextual Info: K100F04K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV K100F04K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 174 S (標準)

K100F06K

Abstract: TK100F06K3 TK100 2-10W1A K100F06K3
Contextual Info: K100F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV K100F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • 取り扱いが簡単なエンハンスメントタイプです。

K100F04K

Abstract: TK100 TK100F04K3
Contextual Info: K100F04K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV K100F04K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 174 S (標準)

Contextual Info: i, One. J.S.11S.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 High Voltage Rectifiers K25, K50, K100 Series 2,500V-10,000V 1.5A - 3.0A • 100ns - 300ns Axial Leaded - Epoxy Molded ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS

Contextual Info: K100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)