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    K80F Search Results

    K80F Datasheets (2)

    Cmsemicon
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge BAT32A239KK80FA
    Cmsemicon 32-bit ARM Cortex-M0+ microcontroller with 256KB Flash, 32KB SRAM, 12-bit ADC, multiple communication interfaces, and ultra-low power consumption down to 0.8uA in deep sleep mode. Original PDF
    badge BAT32G439GK80FA
    Cmsemicon 32-bit ARM® V8-M based microcontroller with 256KB Flash, 64KB SRAM, 128MHz operation, rich analog peripherals, multiple communication interfaces, and low power modes including deep sleep at 20uA. Original PDF
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    K80F Price and Stock

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    Vishay Dale CRCW04026K80FKEDC

    RES 6.8K OHM 1% 1/16W 0402
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    Vishay Dale CRCW04021K80FKEDC

    RES 1.8K OHM 1% 1/16W 0402
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    CRCW04021K80FKEDC Cut Tape 48,759 1
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    Vishay Dale CRCW06036K80FKEB

    RES SMD 6.8K OHM 1% 1/8W 0603
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    CRCW06036K80FKEB Cut Tape 16,681 1
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    CRCW06036K80FKEB Tape & Reel 10,000 10,000
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    Vishay Techno CRMV1206AF1K80FKEF

    CRMV1206, 3-SIDED, SOLDER COATED
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    CRMV1206AF1K80FKEF Tape & Reel 4,000 4,000
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    Vishay Techno CRMV1206AF6K80FKEF

    CRMV1206, 3-SIDED, SOLDER COATED
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    K80F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K100F

    Abstract: K60F K80F
    Contextual Info: K60F K80F K100F HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 200nS RECOVERY V rw m AXIAL LEADED in. mm I F T rr = 6000-10000V = 1.5A = 200nS ,375±.015 (9.53±.38) ,250±.015 (6.35±.38) L •093±.003 (2.36±.06) .40(10.16) Min. ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS


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    200nS K100F 000-10000V 200nS K100F K60F K80F PDF

    K80F

    Abstract: toshiba transistor date code marking TK150F04K3L TK80F08K3 K80F08K
    Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.4 ± 0.1 1.1 Symbol


    Original
    TK80F08K3 K80F toshiba transistor date code marking TK150F04K3L TK80F08K3 K80F08K PDF

    K80F08K

    Abstract: TK80F08K3
    Contextual Info: K80F08K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K80F08K3 スイッチングレギュレーター用 :RDS (ON) = 3.4 mΩ (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) z 取り扱いが簡単なエンハンスメントタイプです。


    Original
    TK80F08K3 K80F08K TK80F08K3 PDF

    Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator Low leakage current: IDSS = 10 A (max) (VDS = 75 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original
    TK80F08K3 PDF

    Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.4 ± 0.1 1.1 Symbol


    Original
    TK80F08K3 PDF