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    K80F Search Results

    K80F Datasheets (2)

    Cmsemicon
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge BAT32A239KK80FA
    Cmsemicon 32-bit ARM Cortex-M0+ microcontroller with 256KB Flash, 32KB SRAM, 12-bit ADC, multiple communication interfaces, and ultra-low power consumption down to 0.8uA in deep sleep mode. Original PDF
    badge BAT32G439GK80FA
    Cmsemicon 32-bit ARM® V8-M based microcontroller with 256KB Flash, 64KB SRAM, 128MHz operation, rich analog peripherals, multiple communication interfaces, and low power modes including deep sleep at 20uA. Original PDF
    SF Impression Pixel

    K80F Price and Stock

    Vishay Dale

    Vishay Dale CRCW04026K80FKED

    RES 6.8K OHM 1% 1/16W 0402
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    DigiKey CRCW04026K80FKED Tape & Reel 100,000 10,000
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    Vishay Dale CRCW02016K80FKED

    RES SMD 6.8K OHM 1% 1/20W 0201
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    DigiKey CRCW02016K80FKED Tape & Reel 50,000 10,000
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    Vishay Dale CRCW08052K80FKEA

    RES SMD 2.8K OHM 1% 1/4W 0805
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    DigiKey () CRCW08052K80FKEA Digi-Reel 37,570 1
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    CRCW08052K80FKEA Cut Tape 37,570 1
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    CRCW08052K80FKEA Tape & Reel 35,000 5,000
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    Vishay Dale CRCW06036K80FKEC

    D11/CRCW0603 100 6K8 1% ET6 E3
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    DigiKey () CRCW06036K80FKEC Cut Tape 18,955 1
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    CRCW06036K80FKEC Digi-Reel 18,955 1
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    Vishay Dale CRCW20101K80FKEF

    RES SMD 1.8K OHM 1% 3/4W 2010
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    DigiKey CRCW20101K80FKEF Tape & Reel 8,000 4,000
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    K80F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K100F

    Abstract: K60F K80F
    Contextual Info: K60F K80F K100F HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 200nS RECOVERY V rw m AXIAL LEADED in. mm I F T rr = 6000-10000V = 1.5A = 200nS ,375±.015 (9.53±.38) ,250±.015 (6.35±.38) L •093±.003 (2.36±.06) .40(10.16) Min. ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS


    OCR Scan
    200nS K100F 000-10000V 200nS K100F K60F K80F PDF

    K80F

    Abstract: toshiba transistor date code marking TK150F04K3L TK80F08K3 K80F08K
    Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.4 ± 0.1 1.1 Symbol


    Original
    TK80F08K3 K80F toshiba transistor date code marking TK150F04K3L TK80F08K3 K80F08K PDF

    K80F08K

    Abstract: TK80F08K3
    Contextual Info: K80F08K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K80F08K3 スイッチングレギュレーター用 :RDS (ON) = 3.4 mΩ (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) z 取り扱いが簡単なエンハンスメントタイプです。


    Original
    TK80F08K3 K80F08K TK80F08K3 PDF

    Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator Low leakage current: IDSS = 10 A (max) (VDS = 75 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original
    TK80F08K3 PDF

    Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.4 ± 0.1 1.1 Symbol


    Original
    TK80F08K3 PDF