K 3911 MOSFET Search Results

Contextual Info: Data Sheet No. 1.044 International HSR Rectifier Series PVT322A Microelectronic Power IC Relay Dual Pole, Normally Open 0-250V, 170mA AC/DC HEXFET POWER MOSFET PHOTOVOLTAIC RELAY PVT322A Features General Description HEXFET Power MOSFET output. Bounce-free operation •

Contextual Info: Provisional Data Sheet No. PD-9.427B International IOR Rectifier JANTX2N6790 HEXFET POWER MOSFET JANTXV2N6790 [REF:MIL-PRF-19500/555] [GENERIC:IRFF220] N - C H AN NEL 200 Volt, 0.80Q HEXFET Product Summary Part Number BV dss H E X F E T technology is the key to International

Contextual Info: I p| j -0 ppi q j- j q pj q J IO R Provisional Data Sheet No. PD-9.423B Rectifier JANTX2N6782 HEXFET POWER MOSFET JANTXV2N6782 [REF:MIL-PRF-19500/556] [GENERIC:IRFF110] N -C H A N N E L 100 Volt, 0.60Q HEXFET Product Summary Part Number H E X F E T technology is the key to International

Contextual Info: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package

Contextual Info: International Provisional Data Sheet No. PD-9.428B IOR Rectifier JANTX2N6792 HEXFET POWER MOSFET JANTXV2N6792 [REF:MIL-PRF-19500/555] [GENERIC:IRFF320] N -C H A N N E L 400 volt, 1.an HEXFET H E X F E T technology is the key to International Rectifier’s advanced line of power M OSFET transis­

Contextual Info: Ip| ternati OnOI Provisional Data Sheet No. PD-9.330E Rectifier JANTX2N6770 HEXFET POWER MOSFET JANTXV2N6770 [REF:MIL-PRF-19500/543] [GENERIC:IRF450] IO R N -C H A N N E L 500 Volt, 0.400 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis­

IRF510 application note

Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510
Contextual Info: HE 0 | MÛS54S2 0 0 0 0 4 3 4 3 | Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513

J846

Abstract: 20 ampere MOSFET 900Volts JS46
Contextual Info: 7294621 POWEREX INC 98D "ifi dF 0271S D ~ | 72=141,21 G D a a V l S b | J846 Powerex, Inc., Hiilis Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 3 Amperes/900 Volts Description O U T L IN E O R A M N O Powerex Single EXMOS™ MOSFET

Contextual Info: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier

a41 smd diode

Contextual Info: IntGrnOtiOnOI IOR Rectifier Provisional Data Sheet No. PD-9.1556 HEXFET POWER MOSFET IRFNG50 N -C H A N N E L 1000 Volt, 2.0£i HEXFET Product Summary H E X F E T techn o lo g y is the key to International Rectifier’s advanced line of power M O S F E T transis­

irf4321

Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
Contextual Info: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB

Contextual Info: International Ira*]Rectifier po-aia« IRLIZ24N preliminary HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

300 volt 5 ampere mosfet

Abstract: J732 20 ampere MOSFET 200 ampere MOSFET mosfet de 120 volts 10a J988 JS88
Contextual Info: 7294621 PÓWEREX INC T f l D e | 72TMt.ai DDG57S7 □ m /HBtEX D T"-3?'-/7 J988 Powerex, Inc., Hillls Street, Ybungwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 10 Amperes/450-500 Volts Description. Powerex Single EXMOS™ MOSFET

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

Contextual Info: h e D I w a ss4sa a a a a ia a ,_T IN TER N A TION A L s I T-39-11 Provisional Data Sheet No. PD-9,569 r e c t if ie r INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED HEXSense — Current Sense IRC644 Part Number BV q s s F>DS on (D IRC644

irf630

Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
Contextual Info: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ MTP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631

IRFJ431

Abstract: IRFJ433 G577 IRFJ430 IRFJ432 t-030u 00DD2
Contextual Info: H E D I 4 0 5 5 4 5 2 OGCHSTÖ 5 | Data Sheet No. PD-9.408A IN TER N A TIO N A L R E C T IF IE R T-39-11 INTERNATIONAL RECTIFIER I Q R IRFJ430 HEXFET TRANSISTORS IRFJ431 N-CHANNEL POWER MOSFETs IRFJ432 IRFJ433 Features: 500 Volt, 1.5 Ohm HEXFET T he HEXFET® technology is the key to International

irfp064n

Contextual Info: International ^Rectifier P D 9 .1 3 8 3 IRFP064N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 5 5 V

3s4 MARKING CODE DIODE

Abstract: IRF540NS
Contextual Info: PD -9.1342 International [^Rectifier IRF540NS PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss= 100V ^D S o n =

diode H8 10E

Abstract: IRC832 IRC830
Contextual Info: H E D I r -' 4 0 5 5 4 5 2 OGQÛ'îBÛ fc, | IN T E R N A T IO N A L Data Sheet No. PD-9.455C R E C T IF IE R INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE AND dv/dt RATED* IRC830 HEXSense - Current Sense C Series od Power MOSFET IR C S3 S SOURCE KELVIN

RFD3055RLE

Abstract: 12n06 d0420 RFP3055RLE RFD3055RLESM RFP12N06RLE RFD12N06RLE RFD12N06RLESM 12N06RLE
Contextual Info: R F D 12N 06R LE , R FD 12N 06R LE S M R F P 12N 06R L E , R F D 3055R L E SE CT OR R FD 3055R LE S M , R F P 3055R L E u a o d i q n M r c r o ° HA RR IS S E M I C O N D May 1992 Features N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs

Contextual Info: International SRectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Vdss = 55 V ^D S o n - 0.045Q

Contextual Info: hternational I sr]Rectifier PD91306 IRFIZ46N preliminary HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5K V R M S Sink to Lead Creepage Dist. = 4.8m m Fully Avalanche Rated Vdss = 55 V

IRF248N

Abstract: IRFIZ48N
Contextual Info: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description