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IRF248N Abstract: IRFIZ48N Contextual Info: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description	OCR Scan	IRFIZ48N O-220 0316Tel: IRF248N IRFIZ48N	PDF

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IRF248N

Abstract: IRFIZ48N
Contextual Info: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description

OCR Scan

IRFIZ48N O-220 0316Tel: IRF248N IRFIZ48N

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