0316TEL Search Results

IRF248N

Abstract: IRFIZ48N
Contextual Info: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description

sd55a

Contextual Info: International leg Rectifier PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive PDS on Specified at VGs = 5 0 V & 10V

Contextual Info: I . . I P D -2 .3 5 3 B International I R Rectifier p r e l im in a r y SCHOTTKY RECTIFIER 30 Amp Desciption/Features Major Ratings and Characteristics Characteristics If a v Rectangular waveform V rrm Ifs m @ tp = 8.3ms sine \£ @ 30Apk, T j = 125°C

Contextual Info: International SRectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Vdss = 55 V ^D S o n - 0.045Q

Contextual Info: PD'043 International XQR Rectifier J^L HEXFET Power M O S FE T Photovoltaic Relay Power 1C Relay Dual Pole, Normally Open 0-400V, 120mA AC/DC General Description PVT422P Features T h e P V T 4 2 2 P Series Photovoltaic Relay is a dual­ pole, normally open solid-state relay that can replace