JS88 Search Results

Contextual Info: TOSHIBA M ICRO W A VE POWER M ICRO W AVE SEM ICO NDUCTO R JS8850A-AS TECHNICAL DATA F E AT URES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTA TIO N CH IP FORM H IG H PO W ER p1dB = 2 1 5 d B m a t f = 15 G H z H IG H G AIN G^dB = 9 -0 dB at f = 15 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8838A-AS Power GaAs FETs Chip Form Features • High power - P1dB = 33.5 dBm at f = 8 GHz • High gain - G1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

GK 087

Abstract: A1203 SN 46 LS 46 JS8855-AS
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER p1dB~ 31.5 dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 7dB at f = 15 GH z ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8837A-AS TECHNICAL DATA FEATURES : • HIGH POWER = 3 2 dBm at f = 8 GHz HIGH GAIN G1dB = 7 dB at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROW AVE PO W ER MICROWAVE' SEMICONDUCTOR GaAs FET JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER PldB = 32dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN GjdB = 7dB at f = 15 GHz ■ ION IMPLANTATION RF P E R F O R M A N C E

JS8835-AS

Abstract: fu20
Contextual Info: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8835-AS TECHNICAL DATA FEATURES: • H IG H POW ER PjdB ~ 2 4 dBm at f = 8 GHz ■ H IG H GAIN Gj^jg = 8 dB 3t f — 8 GHz RF P E R F O R M A N C E SUITABLE FOR C-BAND ION IM PLANTATIO N

A1203

Abstract: JS8851-AS MW1011
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs Chip Form Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA M ICRO W AVE POWER M ICRO W AVE SEM ICO NDUCTO R GaAs FET JS8838A-AS TECHNICAL DATA F EA TURES: • ■ HIGH POWER PldB = 33.5 dBm at f = 8 GHz HIGH GAIN G^jg = 5.5 dB at f = 8 GHz RF P E R F O R M A N C E i SUITABLE FOR i ION IMPLANTATION C-BAND AMPLIFIER

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN G id B = 6 .0 dB at f = 2 3 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Toshiba JS8836A-AS

Abstract: JS8836A-AS
Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER IdB = 29.5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION HIGH GAIN G1dB = 7 5 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci

JS8834-AS

Contextual Info: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36

Contextual Info: TOSHIBA M ICROW AVE POW ER MICROWAVE SEMICONDUCTOR JS8835-AS TECHNICAL DATA FEATURES: • H IG H POWER P jjg = 2 4 dBm at f = 8 G H z ■ H IG H GAIN Gj^jg = 8 dB st f = 8 GHz RF P E R F O R M A N C E GaAs FET ' , SUITABLE FOR C-BAND ION IMPLANTATION CHIP FORM

A1203

Abstract: JS8853-AS
Contextual Info: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8853-AS TECHNICAL DATA FEATURES: • HIG H POW ER PldB = 28.0 dBm at f — 15 G Hz ■ SUITABLE FOR Ku-BAND , JOIM IM PLANTATIO N ■ HIG H GAIN GldB = 7 .0 dB at f = 15 G Hz ■ CHIP FORM

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8892-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 2 1 .0 dBm at f = 2 3 GHz • High gain - G1dB = 6 .5 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8892-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PldB = 21.0 dBm at f = 23 GHz HIGH GAIN GldB= 6.5 dB at f = 23 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

JS8834-AS

Abstract: S2230
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8834-AS TECHNICAL DATA FEATURES: • MEDIUM POWER SUITABLE FOR C-BAND AMPLIFIER p1dB = 21 dBm at f = 8 GHz ION IMPLANTATION ■ HIGH GAIN G1dB = 9 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

JS8893-AS

Abstract: k-band amplifier
Contextual Info: TOSHIBA MICROWAVE MICROW AVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM HIGH POWER PldB = 24.0 dBm at f = 23 GHz HIGH GAIN G1 d B = 6 -0 dB at f = 2 3 GHz RF P E R F O R M A N C E S P E C IF IC A T IO N S Ta = 2 5 ° C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8893-AS Power GaAs FETs Chip Form Features • High power - P1dB = 2 4 .0 d B m a tf = 2 3 G H z • High gain - G 1dB = 6.0 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8837A-AS Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G1dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs Chip Form Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTATIO N CH IP FORM H IG H POW ER p1dB = 2 1 5 dBm at f = 15 G H z H IG H G AIN GjdB = 9 '0 dB at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: TOSHIBA MICROWAVE M IC R O W A V E POWER GaAs FET S E M IC O N D U C T O R JS8894-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PidB = 27.0 dBm at f = 23 GHz HIGH GAIN G1 d B = 6-0 dB at f = 23 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM

JS8836A-AS

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER PjdB = 29.5 dBm at f = 8 GHz • HIGH GAIN G1dB = 7 5 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci

Contextual Info: TOSHIBA MICROW AVE POW ER MICROWAVE SEMICONDUCTOR TECHNICAL DATA GaAs FET JS8835-AS FEAT URES: • HIG H POWER PjdB = 2 4 dBm at f = 8 GHz ■ H IG H GAIN Gjdß — 8 dB st f — 8 GHz RF P E R F O R M A N C E ■ ■ ■ SUITABLE FOR C-BAND ION IMPLANTATION