JUL09 Search Results

Contextual Info: THIS DRAWI NG IS COPYRIGHT UNPUBLISHED. RELEASED BY 19 AMP INCORPORATED. FOR ALL P U B L I C A T I ON RI6HTS . 19 LOC DIST REVISIONS DY RESERVED. L TR DESCRIPTION 03 DWN DATE R E V I S E D PER E C R -09 - 0 I 6 3 6 6 SYJ 2I JUL09 APVD LSF OJ ro i ro <J> LO

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT 2 3 -, RELEASED POR PUBLICATION BY 1TCO ELECTRONICS CORPORATION. R E V IS IO N S - ALL INTERNATIONAL RIGHTS RESERVED. G D ESC R IPTIO N F1 DIMPLES R 1 5.87 [R.625] MAX WASHER REV PER ECR 0 9 - 0 1 3 1 JUL09

Contextual Info: 4 TH IS DRAWING IS U N P U B L IS H E D . BY ^ C O COPYRIGHT 4 RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 REVIS IO N S - - R E S ER V ED . P LTR 0 2 D E S C R IP TIO N DATE REVISED PER E C O - 0 9 - 0 1 6 882 DWN APVD HMR OR 21 JUL09

EH 1

Contextual Info: ASK22099-* SHEET 1 OF 1 POSITRONIO ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIO ASIA PTE. LTD. ASSUMES NO

208H

Contextual Info: Sch em atic: ,_ l E lectrical Isolation Voltage: S p ecificatio n s: <§>25°C 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Q: 18 Min 100KHz 0.1V Rise Time (10-90%): 2.5ns Typical Insertion Loss (1 OOKHz—100MHz): —1.1 dB Maximum

BCR153

Contextual Info: BCR153 PNP Silicon Digital Transistor Preliminary data 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR153 WBs Pin Configuration 1=B 2=E Package

transistor 13003d

Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
Contextual Info: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION COPYRIGHT AMP PART NO 8-321871-5 3 BY TYCO ELECTRONICS CORPORATION. M A TE R IA U M /F 8 -3 2 1 8 7 1 -0 LOC G A LL RIG HTS R E S E R V E D . PKG TYPE QTY BOX 10 2 REVISION S D IS T 14 p LTR

v23993a1080a-xxx

Abstract: A1080 V23993 A1080-A A1080B GPS 112 gps nmea interface in atomic clock MAX3232 smd
Contextual Info: GPS Receiver A1080 A Description of Vincotech’s GPS Receiver Module A1080-A/-B User’s Manual Version 4.2 Hardware Revision 04 Revision History Rev. 1.0 1.1 1.2 1.4 2.0 2.1 2.2 2.3 3.0 3.1 3.2 4.0 4.1 Date 10-18-06 12-04-06 12-08-06 03-13-07 03-23-07 06-01-07

Contextual Info: AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 20A

Led driver 100W schematic

Abstract: schematic of rgb led video wall g094010lf 12V dc, 350mA 10watt LED driver UCC28810 PMP4501 power supply driver led 100w schematic pmp3598 PMP3976 TRIAC dimmer pic RGB LED cookbook
Contextual Info: LED Reference Design Cookbook www.ti.com/led 4Q 2009 2 LED Reference Design Cookbook ➔ Table of Contents LED Drive Topology LED Configuration Dimming Options VIN VOUT VDC IOUT (mA) Device Page 10 series Digital or PWM 3 to 18 VDC 26 or 38 maximum 700 maximum

Contextual Info: BB439. Silicon Variable Capacitance Diode
For VHF tuned circuit applications
High figure of merit BB439 1 2 Type BB439 Package SOD323 Configuration single LS nH Marking 1.8 white 2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

CRT Drivers

Abstract: TDA4885
Contextual Info: Philips Semiconductors Product specification Triple video driver hybrid amplifier FEATURES CR1296 PINNING - SOT454A • Cascode configuration PIN DESCRIPTION • Typical voltage gain of 15 1 • Directly driven by pre-amplifier: no buffer required 2 compensation A

philips stereo amplifier 384

Abstract: dac for audio
Contextual Info: Philips Semiconductors Preliminary specification Low-voltage low-power stereo audio CODEC with DSP features UDA1340 FEATURES General • Low power consumption • 3.0 V power supply Him • 256, 384 and 512fs system clock BITSTREAM CONVERSION • Small package size SSOP28

EFE300M

Abstract: EN61000-3-3
Contextual Info: • Designed for Medical Equipment BF rated • High Efficiency • 6 in x 3 in footprint • High Power Density (up to 18W/in³) • No minimum load • Fits 1U applications Key Market Segments & Applications Medical Broadcast EFE300M Instrumentation ATE

BB439

Contextual Info: BB439. Silicon Variable Capacitance Diode
For VHF tuned circuit applications
High figure of merit BB439 1 2 Type BB439 Package SOD323 Configuration single LS nH Marking 1.8 white 2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

bav170

Abstract: MarKING Jxs sot23
Contextual Info: BAV170. Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

smd diode 644

Abstract: 644 Diode B0907 IR 644 DIODE T25 4 DIODE SMD T25 Q62702-B0905 Q62702-B0907 smd diode marking code 2a 5k variable resistance
Contextual Info: BB 644 Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure

1-103177-2

Contextual Info: 501-492 Qualification Test Report 16Oct09 Rev A Interconnection System, AMPMODU* Mod II Receptacle Assemblies 1. INTRODUCTION 1.1. Purpose Testing was performed on AMPMODU* Mod II receptacle assemblies to determine their conformance to the requirements of Product Specification 108-25026 Revision D.

AON6704L

Contextual Info: AON6704L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON6704L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

Contextual Info: BB439. Silicon Variable Capacitance Diode
For VHF tuned circuit applications
High figure of merit BB439 1 2 Type BB439 Package SOD323 Configuration single LS nH Marking 1.8 white 2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter